Check patentability & draft patents in minutes with Patsnap Eureka AI!

Placement table and plasma processing device

A plasma and processing device technology, which is applied in the field of ion plasma processing devices, can solve problems such as the reduction of ashing rate, achieve the effects of suppressing loss of activity and improving processing efficiency

Active Publication Date: 2018-06-12
SHIBAURA MECHATRONICS CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the ashing rate of the peripheral portion of the substrate to be processed is lowered in the region where the member causing the reduction reaction, such as the aluminum oxide film on the table surface, is placed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Placement table and plasma processing device
  • Placement table and plasma processing device
  • Placement table and plasma processing device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0020] Embodiments are illustrated below with reference to the drawings. In addition, in each drawing, the same reference numerals are assigned to the same components, and detailed description thereof will be appropriately omitted.

[0021] In this embodiment, a plasma processing apparatus that performs a lift-off process on a resist layer formed on a surface to be processed of a non-processed substrate W such as a glass substrate is exemplified.

[0022] figure 1 It is a schematic cross-sectional view illustrating the plasma processing apparatus 100 according to the first embodiment. figure 1 The illustrated plasma processing apparatus 100 is a plasma processing apparatus in which a plasma generation region is isolated from a processing vessel 1, and is generally called a remote plasma processing apparatus.

[0023] The plasma processing apparatus 100 includes a processing container 1 , a plasma generating unit 3 , and a decompression unit 8 . The plasma generator 3 is pro...

no. 2 Embodiment approach

[0052] Second Embodiment (Plasma Treatment Method)

[0053] Embodiments are illustrated below with reference to the drawings. In addition, in each drawing, the same reference numerals are assigned to the same components, and detailed description thereof will be appropriately omitted.

[0054] Here, a plasma processing method of performing a lift-off process on a resist layer formed on a surface to be processed of a glass substrate (substrate) is exemplified. In addition, here, the resist stripping process in a series of steps of manufacturing an EUV mask blank (Mask Blank) will be described.

[0055] Figure 4 (a)~ Figure 4 (c) is a schematic cross-sectional view illustrating the plasma processing method according to the second embodiment.

[0056] First, an EUV mask blank (substrate to be processed) W in which a reflective layer 201 , a protective layer 202 , an absorber layer 203 , and a resist layer 204 are laminated in this order on a base 200 is prepared.

[0057] T...

no. 3 Embodiment approach

[0077] This embodiment relates to, for example, a stand used for a plasma processing apparatus.

[0078] In this embodiment, also use figure 1 The plasma processing apparatus 100 is shown. The plasma processing apparatus 100 is a plasma processing apparatus in which a plasma generation area is isolated from the processing container 1 .

[0079] The substrate W to be processed is placed on the stage 4 provided in the processing chamber 1, and plasma processing is performed by plasma products such as active species (radicals) generated by the plasma generated in the plasma generation region P. .

[0080] In this embodiment as well, the plasma processing of the substrate W to be processed is performed by reducing radicals such as hydrogen radicals.

[0081] Like the first and second embodiments described above, the surface of the member exposed to reducing radicals is made of quartz (SiO 2 ) or aluminum oxide film (Al 2 o 3 ) and other oxygen-containing materials, when redu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a placement table and a plasma processing apparatus. In the placement table for placing a substrate to be processed that is processed by reducing radicals, the placement table includes: a placement table that is covered by the substrate to be processed in plan view and a non-placement surface adjacent to the placement surface, at least a part of the surface of the non-placement surface is covered with a material that does not react with reducing free radicals.

Description

technical field [0001] The invention relates to a placing platform and a plasma processing device. Background technique [0002] There is a plasma processing apparatus using plasma as an apparatus for performing an ashing process for peeling off a resist layer formed on a substrate to be processed, such as a silicon wafer for semiconductor device manufacturing and a glass substrate for an exposure mask. [0003] When performing plasma treatment such as ashing treatment, chemical treatment may be performed mainly with radicals generated from the plasma. For example, when processing is performed in a plasma processing device in which the plasma generation area of ​​a remote plasma processing device is isolated from the processing container, plasma is generated in the discharge tube, and the plasma product generated by the plasma is Active substances (radicals) with a long medium life reach the surface of the substrate to be processed and are processed. [0004] In such a pla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
CPCH01L21/68757G03F1/60G03F7/427H01J37/32422H01J37/32486H01J37/32715H01J37/32229H01J37/32825
Inventor 出村健介
Owner SHIBAURA MECHATRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com