Generation method for thin film transistor (TFT) liquid crystal display (LCD) structure provided with additional layer and failure detection device
An additional layer and observation equipment technology, applied in the field of optics, can solve problems such as delays in equipment adjustment time, and continuous occurrence of defects
Inactive Publication Date: 2015-12-09
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology
This delays the adjustment time of the equipment, making the defects continue to occur, resulting in a large number of similar defects.
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[0034] The present invention proposes a TFTLCD structure with an additional layer in order to detect the occurrence of defects in time. Its purpose is to form a layer of colored film under the channel. When the channel etching is completed, the color of the reflected light of this part can be observed through special observation equipment to judge whether there is a disconnection phenomenon.
[0035] Such as Figure 5 to Figure 7 Shown, the TFTLCD structure generating method with additional layer of the present invention is:
[0036] In step 1, a gate scanning line 1 is formed on the glass substrate 8 through deposition, photolithography and etching, and a SiNx protective film layer 9 is deposited thereon. For the traditional process, the process of forming the channel and signal line structure can be performed. But the present invention still needs to carry out step 2 and step 3.
[0037] Step 2, forming an additional colored layer 11 on the SiNx protective film layer 9 . ...
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The invention provides a generation method for a thin film transistor (TFT) liquid crystal display (LCD) structure provided with an additional layer and an unfavorableness detection device. The method comprises the following steps of: forming a grid scanning line on a glass substrate by deposition, photoetching and etching, and forming a SiN<x> protective film layer on the grid scanning line; forming an additional layer with color on the SiN<x> protective film layer; depositing a layer of SiN<x> thin film which is the same as the SiN<x> protective film layer on the additional layer to serve as a protective layer; depositing a signal line, an Alpha-Si TFT and a SiN<x> layer on the SiN<x> thin film; and etching the additional layer and the SiN<x> thin film which are exposed out of a photoresist, reserving the SiN<x> protective film layer, and processing a passivation layer PVX and a pixel electrode layer indium tin oxide (ITO) by using the current process to form the TFT LCD structure. By forming the additional layer with the color for indicating an failure position, the failure can be found in advance during completing a channel pattern on a second layer.
Description
technical field [0001] The invention belongs to the field of optical technology, and in particular relates to a method for generating a TFTLCD structure with an additional layer and a defect detection method. Background technique [0002] Thin film field effect transistor TFT-LCD occupies a dominant position in the current flat panel display market because of its small size, low power consumption, and no radiation. TFT-LCD devices are formed by combining array glass substrates and color filter glass substrates. On the array substrate, gate lines and signal lines defining pixel areas are arranged to cross each other, and pixel electrodes and thin film transistors are arranged in each pixel area. Driving signals are applied to the gate lines, and image data is applied to the pixel electrodes through the signal lines. A black matrix is arranged on the color filter substrate to prevent light from passing through areas other than the pixel electrodes, a color filter layer is ...
Claims
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Login to View More IPC IPC(8): H01L23/544H01L27/12H01L21/66
Inventor喻志农郭建张潇龙薛唯
OwnerBEIJING INSTITUTE OF TECHNOLOGYGY