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A nio:al/tiox heterogeneous pn junction diode

A pn junction and diode technology, applied in the field of NiO:Al/TiOx heterogeneous pn junction diodes, to achieve the effect of improving performance

Inactive Publication Date: 2018-06-22
TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This choice is of great significance for the development of new devices, but there is no report on the NiO:Al / TiOx heterojunction

Method used

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  • A nio:al/tiox heterogeneous pn junction diode
  • A nio:al/tiox heterogeneous pn junction diode
  • A nio:al/tiox heterogeneous pn junction diode

Examples

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Embodiment 1

[0012] (1) Use the cleaning method in the semiconductor process to clean the silicon wafer and dry it with nitrogen; (2) Preparation of p-NiO:Al: use NiO:Al with a diameter of 50mm 2 o 3 ceramic target. NiO:Al films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is room temperature (RTroom temperature). (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impuritie...

Embodiment 2

[0014] (1) Use the cleaning method in the semiconductor process to clean the silicon wafer and dry it with nitrogen; (2) Preparation of p-NiO:Al: use NiO:Al with a diameter of 50mm 2 o 3 ceramic target. NiO:Al films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is 200 o c. (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The...

Embodiment 3

[0016] (1) Use the cleaning method in the semiconductor process to clean the silicon wafer and dry it with nitrogen; (2) Preparation of p-NiO:Al: use NiO:Al with a diameter of 50mm 2 o 3 ceramic target. NiO:Al films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2+Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is 300 o c. (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The ...

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Abstract

The invention discloses a special NiO:Al / TiOx pn junction diode. The NiO:Al / TiOx special pn-junction diode at least comprises a pn junction and an ohmic contact electrode, wherein a p-type NiO:Al film and an n-type TiOx film are grown on a Si substrate to form a special pn junction. The magnetron sputtering technology is utilized on the Si substrate to prepare the special NiO:Al / TiOx pn junction diode, a magnetron sputtering technology or a heat evaporation method is employed to manufacture electrodes on the pn junction. The NiO:Al / TiOx special pn junction diode has properties of relatively high reverse breakdown voltage and relatively large forward current density, and the manufacturing process is simple.

Description

technical field [0001] The invention relates to a NiO:Al / TiOx heterogeneous pn junction diode. The invention belongs to the field of functional materials and optoelectronic devices. Background technique [0002] The internal degrees of freedom of the d(f) electrons contained in the strongly correlated material NiO, such as the interaction between spin, charge, and orbit, make NiO exhibit many exotic properties, and at the same time make the physical properties of the material vary with internal parameters such as temperature , pressure, and doping changes significantly. So far, NiO has been used in the research of catalysts, battery electrodes, electrochemical capacitors and other fields because of its good catalytic performance and thermal sensitivity, but there are few reports on its photoelectric properties. Semiconductor heterojunctions are easy to realize the separation of photogenerated charges and are widely used in the research and development of optoelectronic dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/24H01L29/66
CPCH01L29/24H01L29/66969H01L29/8611
Inventor 李彤王铁钢倪晓昌
Owner TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE