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NiO:Na/TiOx-heterogeneous-pn-junction-based diode

A pn junction and diode technology is applied in the field of NiO:Na/TiOx hetero pn junction diodes to achieve the effect of improving performance

Inactive Publication Date: 2015-12-09
TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This choice is of great significance for the development of new devices, but there is no report on the NiO:Na / TiOx heterojunction

Method used

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  • NiO:Na/TiOx-heterogeneous-pn-junction-based diode
  • NiO:Na/TiOx-heterogeneous-pn-junction-based diode
  • NiO:Na/TiOx-heterogeneous-pn-junction-based diode

Examples

Experimental program
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Effect test

Embodiment 1

[0012] (1) Use the cleaning method in the semiconductor process to clean the silicon wafer and dry it with nitrogen; (2) Preparation of p-NiO:Na: use NiO:Na with a diameter of 50mm 2 O ceramic target. NiO:Na films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is room temperature (RTroomtemperature). (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impurities on...

Embodiment 2

[0014] (1) Use the cleaning method in the semiconductor process to clean the silicon wafer and dry it with nitrogen; (2) Preparation of p-NiO:Na: use NiO:Na with a diameter of 50mm 2 O ceramic target. NiO:Na films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, the substrate temperature is room temperature, and 200 o C post-annealing 0.5h. (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove imp...

Embodiment 3

[0016] (1) Use the cleaning method in the semiconductor process to clean the silicon wafer and dry it with nitrogen; (2) Preparation of p-NiO:Na: use NiO:Na with a diameter of 50mm 2 O ceramic target. NiO:Na films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2+Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, the substrate temperature is room temperature, and 300 o C post-annealing 0.5h. (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impu...

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Abstract

Disclosed in the invention is a NiO:Na / TiOx-heterogeneous-pn-junction-based diode at least comprising a pn junction and an ohmic contact electrode. A p type NiO:Na thin film and an n type TiOx thin film grow on a Si substrate by the pn junction to obtain a heterogeneous pn junction. According to the invention, the NiO:Na / TiOx-heterogeneous-pn-junction-based diode is prepared on the Si substrate by using a magnetron sputtering technique; and then an electrode is prepared on the pn junction by means of magnetron sputtering or heat evaporation. The prepared heterogeneous-pn-junction-based diode has the high reverse breakdown voltage and the high forward current density. Moreover, the preparation process is simple.

Description

technical field [0001] The invention relates to a NiO:Na / TiOx heterogeneous pn junction diode. The invention belongs to the field of functional materials and optoelectronic devices. Background technique [0002] The internal degrees of freedom of the d(f) electrons contained in the strongly correlated material NiO, such as the interaction between spin, charge, and orbit, make NiO exhibit many exotic properties, and at the same time make the physical properties of the material vary with internal parameters such as temperature , pressure, and doping changes significantly. So far, NiO has been used in the research of catalysts, battery electrodes, electrochemical capacitors and other fields because of its good catalytic performance and thermal sensitivity, but there are few reports on its photoelectric properties. Semiconductor heterojunctions are easy to realize the separation of photogenerated charges and are widely used in the research and development of optoelectronic dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/221H01L21/329
CPCH01L29/8611H01L29/225H01L29/66136
Inventor 李彤王铁钢陈佳楣
Owner TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE