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A nio:ag/tiox heterogeneous pn junction diode

A pn junction and diode technology, applied in the field of NiO:Ag/TiOx heterogeneous pn junction diodes, to achieve the effect of improving performance

Active Publication Date: 2018-08-24
深圳市深鸿盛电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This choice is of great significance for the development of new devices, but there is no report on the NiO:Ag / TiOx heterojunction

Method used

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  • A nio:ag/tiox heterogeneous pn junction diode
  • A nio:ag/tiox heterogeneous pn junction diode
  • A nio:ag/tiox heterogeneous pn junction diode

Examples

Experimental program
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Effect test

Embodiment 1

[0012] (1) Clean the silicon wafer with the cleaning method in the semiconductor process and dry it with nitrogen; (2) Preparation of p-NiO:Ag: use NiO:Ag with a diameter of 50mm 2 O ceramic target. NiO:Ag films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is room temperature (RTroom temperature). (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impurities on ...

Embodiment 2

[0014] (1) Clean the silicon wafer with the cleaning method in the semiconductor process and dry it with nitrogen; (2) Preparation of p-NiO:Ag: use NiO:Ag with a diameter of 50mm 2 O ceramic target. NiO:Ag films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is 200 o c. (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coat...

Embodiment 3

[0016] (1) Clean the silicon wafer with the cleaning method in the semiconductor process and dry it with nitrogen; (2) Preparation of p-NiO:Ag: use NiO:Ag with a diameter of 50mm 2 O ceramic target. NiO:Ag films prepared by magnetron sputtering. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=30%. The sputtering pressure is 2Pa, and the sputtering power is 150W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coating time is 40min, and the substrate temperature is 300 oc. (3) Preparation of n-TiOx: using TiO with a diameter of 50mm 2 ceramic target. The chamber background vacuum before sputtering is better than 3x10 -4 Pa, the relative partial pressure of oxygen used O 2 / (O 2 +Ar)=0%, the sputtering pressure is 1Pa, and the sputtering power is 100W. Before coating, pre-sputter for 5 min to remove impurities on the target surface. The coati...

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Abstract

The invention discloses a NiO:Ag / TiOx heterogeneous pn junction diode, which at least comprises a pn junction and an ohmic contact electrode, wherein the pn junction is a heterogeneous pn junction which is obtained by growing a p-type NiO:Ag thin film and an n-type TiOx thin film on a Si substrate. The NiO:Ag / TiOx heterogeneous pn junction diode is prepared on the Si substrate by a magnetic sputtering process; and finally an electrode is fabricated on the pn junction by a magnetic sputtering method or a thermal evaporation method. The heterogeneous pn junction diode disclosed by the invention has relatively high reverse breakdown voltage and relatively high forward current density; and the preparation method is simple in process.

Description

technical field [0001] The invention relates to a NiO:Ag / TiOx heterogeneous pn junction diode. The invention belongs to the field of functional materials and optoelectronic devices. Background technique [0002] The internal degrees of freedom of the d(f) electrons contained in the strongly correlated material NiO, such as the interaction between spin, charge, and orbit, make NiO exhibit many exotic properties, and at the same time make the physical properties of the material vary with internal parameters such as temperature , pressure, and doping changes significantly. So far, NiO has been used in the research of catalysts, battery electrodes, electrochemical capacitors and other fields because of its good catalytic performance and thermal sensitivity, but there are few reports on its photoelectric properties. Semiconductor heterojunctions are easy to realize the separation of photogenerated charges and are widely used in the research and development of optoelectronic dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/24H01L21/34
CPCH01L29/24H01L29/66969H01L29/8613
Inventor 李彤王铁钢陈佳楣
Owner 深圳市深鸿盛电子有限公司