Heated substrate support with temperature profile control

Abstract

Methods and apparatus of substrate supports having temperature profile control are provided herein. In some embodiments, a substrate support includes: a plate having a substrate receiving surface and an opposite bottom surface; and a shaft having a first end comprising a shaft heater and a second end, wherein the first end is coupled to the bottom surface. Methods of making a substrate support having temperature profile control are also provided.

Description

technical field [0001] Embodiments of the invention generally relate to semiconductor processing equipment. Background technique [0002] In semiconductor substrate processing, substrate temperature is often a critical processing parameter. Changes in temperature during processing and temperature gradients across the substrate surface are generally detrimental to material deposition, etch rates, feature taper angles, step coverage, and the like. It is often desirable to control the substrate temperature profile before, during, and after substrate processing to enhance processing and minimize unwanted characteristics and / or defects. [0003] The substrate is typically supported on a substrate support or mount having a centrally located support shaft for supporting the substrate support. The substrate support typically includes one or more built-in heaters adapted to heat a substrate disposed on the substrate support. However, the inventors have observed that conventional h...

AI Technical Summary

Problems solved by technology

However, the inventors have observed that conventional heated substrate supports with built-in heaters typically exhibit temperature non-uniformity at the central region of the substrate support, which leads to non-uniform substrate processing results

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