Temperature solving algorithm of insulated gate bipolar transistor (IGBT) module

Abstract

The invention discloses a temperature solving algorithm of an insulated gate bipolar transistor (IGBT) module. The temperature solving algorithm of the IGBT module comprises the following steps of firstly, extracting the fitting parameters of a power loss model, thermal resistance and thermal capacitance parameters of a seven-order equivalent Cauer heat transfer network model and an ambient temperature of the IGBT module, afterwards, judging the states in which an IGBT and a freewheeling diode (FWD) are in a current iteration cycle according to gate triggering signals, which are detected from an electrical network model, of the current iteration cycle and a previous iteration cycle, subsequently, calculating the power losses of the IGBT and the FWD in the corresponding states of the current iteration cycle, and finally, calculating the temperature of the IGBT module by the heat transfer network model of the IGBT module through synthesizing the power loss and the ambient temperature of the current iteration cycle. By using the temperature solving algorithm of the IGBT module, which is provided by the invention, not only can the real-time calculation of the temperature of the IGBT module be realized, but also foundations can be laid for the aspects of the heat radiation design, the performance optimization, the reliability evaluation and the like of the IGBT module.

Description

technical field [0001] The invention relates to a temperature solving algorithm, in particular to an insulated gate bipolar transistor IGBT module temperature solving algorithm. Background technique [0002] The temperature of the insulated gate bipolar transistor (IGBT) module not only directly affects the heat dissipation design, working performance and service life of the IGBT module, but also directly affects the long-term reliability of the converter system. The normal and safe operation of the system is of great significance. [0003] There are many existing methods for obtaining the PN junction temperature (junction temperature) and case temperature of the silicon chip of the IGBT module. Chinese patent ZL: 201410205679.8 discloses "Online Calculation Method for IGBT Module Junction Temperature of Wind Power Converter". Under the premise of considering the electrothermal coupling characteristics of IGBT modules, the IGBT module junction temperature is calculated onli...

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Problems solved by technology

However, none of the above-mentioned patents involves the calculation of the temperature of the IGBT module, because the IGBT module not only includes the PN junction of the silicon chip, the outer shell, but also includes the upper solder layer, upper copper layer, ceramic layer, lower copper layer, lower solder layer, and substrate. Floor

To sum up, there is currently no method to obtain the temperature of the IGBT module

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