Method for determining film continuity critical thickness

Abstract

The invention discloses a method for determining film continuity critical thickness. The method includes that a dispersion formula model and a fitting mode are arranged on a spectrum ellipsometer, under the condition that the thickness of the film growing on a substrate is less than the preset film thickness, an indirect fitting method is adopted to obtain a change curve showing the phase difference of the film reflected light polarization state changing with the incident light wavelength and a change curve showing the corresponding tangent angle of the film reflection coefficient amplitude ratio changing with the incident light wavelength; under the condition that the thickness of the film growing on the substrate is greater than or equal to the preset film thickness, a direct fitting method is adopted to obtain a change curve showing the phase difference of the film reflected light polarization state changing with the incident light wavelength and a change curve showing the corresponding tangent angle of the film reflection coefficient amplitude ratio changing with the incident light wavelength; and the film continuity critical thickness is determined based on the change curves. The method solves the problem of difficulty in determining the film continuity critical thickness, and has important guiding significance for the precise preparation and application of nano-optoelectronic devices and the related theoretical researches.

Description

technical field [0001] The present invention relates to optics and nanotechnology, in particular to a method for determining the critical thickness of film continuity. Background technique [0002] Thin film materials are an important branch in the field of modern materials. When the thickness of the film is on the submicron scale, its physical properties such as mechanics, electricity, magnetism and optics will change significantly compared to the three-dimensional bulk material, and when the thickness of the film is further reduced, the surface becomes discrete and discontinuous When the nano-particles are used, due to factors such as quantum size effect, surface effect and dielectric confinement effect, the physical properties will change more significantly. Therefore, it is of great significance to accurately determine the critical thickness of continuous and discontinuous thin films for the experimental preparation of high-quality and high-precision thin-film optoelect...

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Problems solved by technology

The method can solve the problem of difficulty in determining the critical thickness of film continuity in the prior art, and can improve the theoretical research on transition from discontinuous film to continuous film

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