A method for preparing a radiation-resistant fault-tolerant storage unit

Abstract

The invention belongs to the field of an integrated circuit, and relates to a radiation-resistant memory cell formed by four inverters which are mutually intertwisted and connected, wherein a latch register is formed by two inverters, when a storage node value is error due to radiation, a circuit which is analogous to the inverter can guarantee that the output of the memory cell still keeps at an original correct value, the mutually intertwisted and connected other storage node drives the storage node which generates error to recover the original correct value after the radiation effect disappears, so that the memory cell has radiation-resistant fault-tolerant characteristic. The error generation frequency of the radiation-resistant fault-tolerant memory cell and a triple modular redundancy scheme is little and equal, radiation-resistant capability of the radiation-resistant fault-tolerant memory cell and the triple modular redundancy scheme is same, the area and power consumption of the radiation-resistant fault-tolerant memory cell is smaller than that of the triple modular redundancy scheme.

Description

technical field [0001] The invention belongs to the field of integrated circuits and relates to a radiation-resistant and fault-tolerant storage unit, in particular to a circuit design method for a radiation-resistant and fault-tolerant storage unit. Background technique [0002] According to data, with the reduction of process size, integrated circuits in chips are more and more susceptible to errors caused by heavy particles or proton radiation in high-level space or near-earth space. It has been reported that if the radiation occurs at the storage node of the storage unit, it may directly cause the storage unit to store the wrong value and generate a single event flip event; if the radiation occurs at the node of the combinational circuit, it may cause a single event transient pulse and change the logic of the circuit node. state; the error value caused by the single event transient pulse is transmitted to the storage unit and may be captured and stored, resulting in a si...

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Problems solved by technology

[0003] The design method of the radiation-resistant storage unit circuit in the prior art mainly includes multi-mode redundancy, error correction code and radiation-resistant hardening technology, etc.; among them, the multi-mode redundancy method is represented by the triple-mode redundancy technology, using redundant circuit modules And the majority voting circuit shields the output of the wrong circuit module, but this method will bring a large area overhead; the error correction code method is represented by the Hamming code, and the position of the error bit is located by calculating the check value of the code; radiation resistance Reinforcement technology is represented by double interlocked memory cells, which add additional transistors and intertwined interconnection lines on the basis of the basic memory cell structure to enhance the radiation resistance of sensitive nodes; however, error correction codes and radiation-resistant hardening technologies will bring come to a larger area overhead and degrade circuit performance

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