Unlock instant, AI-driven research and patent intelligence for your innovation.

Configurable pressure design of a chemical-mechanical planarization grinding head for multi-zone

A chemical mechanical, grinding head technology, applied in the field of grinding systems

Active Publication Date: 2019-11-12
APPLIED MATERIALS INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This constraint limits the number of pressurizable regions that can be included in a grinding head, and the number of pressure distributions that a grinding head can apply

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Configurable pressure design of a chemical-mechanical planarization grinding head for multi-zone
  • Configurable pressure design of a chemical-mechanical planarization grinding head for multi-zone
  • Configurable pressure design of a chemical-mechanical planarization grinding head for multi-zone

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The disclosed embodiments generally relate to polishing systems for polishing substrates, such as semiconductor substrates, for example using CMP. Each type of substrate can often specify a different pressure profile to optimally grind the substrate with the grinding head. The disclosed embodiments allow rapid adjustment of the pressure profile applied across the grinding head to the substrate surface during grinding, which can reduce equipment downtime. The disclosed embodiments may also improve product quality by enabling the use of additional pressure profiles that more closely match the pressure profile most suitable for grinding each substrate. Examples of grinding heads that may be adapted to benefit from the disclosed embodiments include the TITAN HEAD TM 、TITAN CONTOUR TM with TITAN PROFILER TM Abrasive tip, etc., available from Applied Materials, Santa Clara, CA.

[0017] figure 1 is a side cross-sectional view of a CMP system 100 according to one embodime...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A grinding head for chemical mechanical planarization is provided. The grinding head includes a housing and a flexible diaphragm secured to the housing. At least first, second and third pressurizable chambers are disposed in the housing with each chamber contacting the flexible membrane. The first pressure transfer channel is coupled with the first chamber. The second pressure transfer channel is coupled with the third chamber. A first pressure feed line couples the first pressure transfer channel to the second chamber. A second pressure feed line couples the second pressure transfer channel to the second chamber. A first manually movable plug engages the first pressure feed line to allow or block pressure from the first pressure transfer channel to the second chamber. A second manually movable plug engages the second pressure feed line to allow or block pressure from the first pressure transfer channel to the second chamber.

Description

technical field [0001] The disclosed embodiments generally relate to grinding systems for grinding substrates, such as semiconductor substrates. More specifically, embodiments relate to configuring the pressure supplied to a substrate by a polishing head of a chemical mechanical planarization system during polishing. Background technique [0002] Chemical mechanical planarization (CMP) is a process commonly used in the manufacture of high density integrated circuits to planarize or polish layers of material deposited on a substrate. CMP is effectively applied by providing contact between the feature-containing side of the substrate and the polishing pad by moving the substrate relative to the polishing pad in the presence of the polishing fluid. Material is removed from the feature-containing side of the substrate that is brought into contact with the abrasive surface by a combination of chemical and mechanical operations. When grinding a substrate, the grinding head is us...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
CPCB24B37/107B24B37/11B24B37/30H01L21/304
Inventor 吴政勋S·M·苏尼加A·纳耿加斯特S·C-C·徐G·S·丹达瓦特
Owner APPLIED MATERIALS INC