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Method for eliminating SiO2 film thickness decline

A film thickness and bolt technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of unstable film thickness and achieve the effect of eliminating the downward trend of film thickness

Inactive Publication Date: 2017-04-19
PIOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Preparation of SiO by Plasma Treatment Equipment 2 In addition to other test parameters, the thickness of the film is also related to the situation of the plasma equipment itself. As the equipment is used longer, especially after the equipment has been idle for a long time, the plasma processing device, after a long period of idle Continuous SiO 2 34K process, the film thickness results will gradually decrease, resulting in unstable film thickness;

Method used

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  • Method for eliminating SiO2 film thickness decline
  • Method for eliminating SiO2 film thickness decline

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] see figure 1 , an elimination of SiO 2 The method for reducing the film thickness includes: adopting plasma processing equipment, the equipment includes a shower head 1 and an upper cover plate 2, and the spray plate and the upper cover plate are fixed by a plurality of bolts 3;

[0022] After assembling the sprinkler head 1 and the upper cover plate 2, use bolts 3 to loosely fix the bolts to fix the sprinkler head and the upper cover plate in a symmetrical way;

[0023] Increase the torque of the bolts to 5N.

[0024] When installing, the torque of the two symmetrical bolts is the same. The bolt adopts the screw of Hastelloy material.

[0025] The number of bolts adopted is an even number, and the number is 12.

Embodiment 2

[0027] The difference with Example 1 is that,

[0028] Increase the torque of the bolts to 6N.

[0029] The number of bolts adopted is an even number, and the number is 16.

Embodiment 3

[0031] The difference with Example 1 is that,

[0032] Increase the torque of the bolts to 8N.

[0033] The number of bolts adopted is an even number, and the number is 14.

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Abstract

The invention belongs to the field of SiO2 film semiconductor preparation equipment, and in particular relates to a method for eliminating SiO2 film thickness decline. The method is as follows: a plasma processing device is used, the plasma processing device comprises a spray head and an upper cover plate, the spray head and the upper cover plate are fixed by a plurality of bolts; after the spray head and the upper cover plate are assembled, the spray head and the upper cover plate are fixed loose by the bolts in the manner of symmetric fixing; and bolt torque is increased to 5-8N. The method for eliminating the SiO2 film thickness decline by increase of the bolt torque of the spray head, by the increase of the bolt torque of the spray head, SiO2 thin films with stable film thickness can be deposited by the equipment, and SiO2 thick films with stable film thickness also can be deposited by the equipment. The method can be used for simply and effectively eliminating a SiO2 thick film thickness decline trend.

Description

technical field [0001] The invention belongs to the field of silicon dioxide thin film semiconductor preparation equipment, specifically a method for eliminating SiO 2 The method of film thickness reduction. Background technique [0002] Plasma equipment is mainly suitable for surface modification of various materials: surface cleaning, surface activation, surface etching, surface grafting, surface deposition, surface polymerization and plasma-assisted chemical vapor deposition. [0003] Preparation of SiO by Plasma Treatment Equipment 2 In addition to other test parameters, the thickness of the film is also related to the situation of the plasma equipment itself. As the equipment is used longer, especially after the equipment has been idle for a long time, the plasma processing device, after a long period of idle Continuous SiO 2 34K process, the film thickness results will gradually decrease, resulting in unstable film thickness; [0004] At present, with the continuou...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/52
CPCC23C16/402C23C16/52
Inventor 戚艳丽刘忆军曹晓杰
Owner PIOTECH CO LTD