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Chemical Mechanical Polishing of Germanium

A technology of oxidant and composition, applied in the direction of polishing composition containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve the problems of limiting practical practicability, SER depression, foaming, etc., and achieve good germanium removal speed effect

Inactive Publication Date: 2019-03-19
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This high SER in turn creates dishing problems when germanium is planarized using CMP compositions containing hydrogen peroxide or other oxidizing agents (which can severely limit the freedom of choice for using germanium in advanced IC designs)
In the past, cationic surfactants have been evaluated as germanium etch inhibitors; however, such materials produced foaming problems during CMP (which severely limited their practical utility)

Method used

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  • Chemical Mechanical Polishing of Germanium
  • Chemical Mechanical Polishing of Germanium
  • Chemical Mechanical Polishing of Germanium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This example illustrates the effect of selected cationic and nonionic polymers on Ge SER and removal rate.

[0040] Aqueous CMP slurries (at a pH of about 2.3) containing about 2 wt% colloidal silica, 2 wt% hydrogen peroxide, and different polymer additives at a concentration of 100 ppm were used to planarize Ge blanket wafer. Ge removal rate (RR) and static etch rate (SER) were evaluated. Planarization was accomplished on a polisher designated POLI 500 using a polishing pad designated IC1010 under the following conditions: platform speed of about 60 rpm, carrier speed of about 63 rpm, downforce of about 1.5 psi, and about 100 mL / minute The slurry flow rate; the polishing time is 60 seconds. SER was determined by dipping the wafers in the 35°C and 45°C slurries in the presence of oxidizing agents for two minutes.

[0041] In one evaluation, the effect of different polymers on Ge SER was determined. The properties of the pastes as well as the SER values ​​are described...

Embodiment 2

[0048] This example illustrates the effect of different amino acids and pyridine compounds on Ge SER.

[0049] Using commercially available colloidal silica (cocoon-shaped particles with a primary particle size of about 30 to 35 nm and a secondary particle size of about 70 nm, cationic surface-modified) containing 2% by weight, 2% by weight of hydrogen peroxide, and Various amino acid and pyridine additives (i.e., 1000 ppm of lysine, D,L-methionine, arginine, histidine, and 4,4'-trimethylenebipyridine; and 100 ppm of glycine, β- Alanine, valine, aspartic acid, glutamic acid, phenylalanine, and N-(2-hydroxy-1,1-bis(hydroxymethyl)ethyl)glycine (also known as tris(hydroxymethyl)ethyl)glycine Methyl)methylglycine (tricine))) to planarize a Ge blanket wafer with (100) preferred orientation. Planarization was accomplished on a polisher designated POLI 500 using a polishing pad designated IC1010 under the following conditions: platform speed of about 60 rpm, carrier speed of about 6...

Embodiment 3

[0052] This example illustrates the effect of lysine, arginine and poly-MADQUAT on Ge removal (RR) and GeSER.

[0053] Using aqueous CMP slurry (comprising: colloidal silica; hydrogen peroxide; and, various combinations of poly MADQUAT (ALCO 4773), lysine and arginine) (at a pH of about 2.3) to planarize (100) preferred orientation of Ge blanket wafers. Ge removal rate (RR) and static etch rate (SER) were evaluated. Planarization was accomplished on a polisher designated POLI 500 using a polishing pad designated IC1010 under the following conditions: platform speed of about 60 rpm, carrier speed of about 63 rpm, downforce of about 1.5 psi, and about 100 mL / minute The slurry flow rate; the polishing time is 60 seconds. SER was determined by dipping the wafers in the 35°C and 45°C slurries in the presence of oxidizing agents for two minutes. Table 2 provides a summary of the colloidal silica materials used and silica concentrations, amino acids and their concentrations, polym...

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Abstract

A method of planarizing / polishing germanium is described. The method includes the step of abrading a surface of a germanium-containing substrate with an aqueous chemical-mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etch inhibitor. The germanium etch inhibitor is selected from water-soluble polymers, amino acids with non-acidic side chains, bispyridine compounds, and combinations of two or more thereof. The polymer may be a cationic or nonionic polymer comprising basic nitrogen groups, amide groups, or combinations thereof.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application 14 / 308,587, filed June 18, 2014. The content of this priority application is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to chemical mechanical polishing (CMP) compositions and methods. More specifically, the present invention relates to methods for CMP removal of germanium. Background technique [0004] Compositions and methods for CMP of substrate surfaces are well known in the art. Compositions (also referred to as polishing slurries, CMP slurries, and CMP compositions) for chemical mechanical polishing / planarization of various substrates (e.g., semiconductor substrates in integrated circuit fabrication) typically include abrasives, Various additive compounds, and the like. [0005] In conventional CMP techniques, a substrate carrier or polishing head is mounted on a carrier assembly and positio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14
CPCC23F3/06C09G1/02
Inventor 蔡智斌叶铭智G.怀特纳吕龙岱
Owner CMC MATERIALS INC
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