Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of preparation method and application of refraction passivation layer of top emission oled device

A top emission and passivation layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of large light loss, single light-emitting function, and few up-conversion structures, etc., to achieve enhanced chromaticity, The effect of improving the color gamut

Active Publication Date: 2019-02-12
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current top-emitting devices, there are few up-converting structures, a single light-emitting function, and the light transmittance of the material itself is limited, resulting in large light loss.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method and application of refraction passivation layer of top emission oled device
  • A kind of preparation method and application of refraction passivation layer of top emission oled device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A layer of optical adhesive is coated on a common microlens array substrate, baked, and cured by UV to form a film structure opposite to the shape of the array, and the film structure is peeled off to obtain a lens film. The surface of the obtained lens film that is in contact with the upper surface of the array substrate is referred to as the upper surface. A buffer layer is prepared by spin coating on the upper surface of the lens film, and the material of the buffer layer is PEDOT:PSS.

[0024] Prepare PDMS (polydimethylsiloxane) solution, add required quantum dot materials in PDMS solution, such as cadmium sulfide, cadmium selenide, cadmium telluride, the mass fraction is controlled at 10%-40%, and then add the mass fraction Zinc oxide nanoparticles with 1%-10% can improve light reflection ability, and at the same time, fully mix and disperse quantum dot materials. The uniformly mixed PDMS solution is coated on the upper surface of the prepared buffer layer, then b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
quality scoreaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a refraction passivation layer of a top-emitting OLED device, comprising: step 1, providing an array substrate, coating a layer of optical adhesive on the upper surface of the array substrate, and drying the optical adhesive After baking and curing, a film is formed, and the film is peeled off to obtain a lens film; step 2, a buffer layer is prepared on the upper surface of the lens film; step 3, a passivation film is prepared on the upper surface of the buffer layer, and the passivation film is peeled off That is, the refraction passivation layer of the top-emitting OLED device is obtained. The top emission refraction passivation layer provided by the present invention is pasted on the top of the device, which can change the total reflection angle while protecting the cathode, and play the role of isolating water and oxygen.

Description

technical field [0001] The invention belongs to the field of electronic display, and relates to a method for preparing a refraction passivation layer of a top-emitting OLED device and an application thereof. Background technique [0002] In the current field of lighting and display, organic light-emitting diodes (OLEDs) have received more and more attention because of their low starting voltage, thinness, and self-illumination, and have been widely studied and used in the development of lighting products and the panel industry. Achieve the purpose of low energy consumption, light and thin and surface light source. [0003] The luminescence of OLED is mainly through the recombination of excitons, and then exits from the light-emitting layer into the air. For a general bottom-emitting OLED lighting device, the path of light emission is: light-emitting layer-anode-substrate-air, and the light needs to go through four steps before it can reach the air and enter the human eye. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/00H01L51/52B82Y30/00
CPCB82Y30/00H10K71/20H10K71/80H10K50/856H10K50/84H10K50/858H10K50/844H10K71/00
Inventor 黄辉
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD