Intelligent power module and air conditioner

Abstract

The invention discloses an intelligent power module. The module comprises an input pin, an output pin, an inverting circuit and a driving unit, wherein an input end of the inverting circuit is connected with the input pin; an output end of the inverting circuit is connected with the output pin; the inverting circuit comprises a plurality of power switch MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and a plurality of follow current MOSFET which are correspondingly connected with the plurality of power switch MOSFET in parallel; the power switch MOSFET and the follow current MOSFET are MOSFET; the inverting circuit is used for inverting direct current input by the input pin into alternating current; the driving unit is connected with grid electrodes of the plurality of power switch MOSFET respectively; the driving unit is used for driving the plurality of power switch MOSFET to be switched on and off, so as to control the inverting circuit to be inverted, so that the switching-on speed of the power switch MOSFET can be improved, current noises are reduced, power loss is reduced and the applicability of a product is improved; the intelligent power module is especially applicable to an electric control system with ultralow power consumption requirements or an electric control system adopting a high-frequency pulse width modulation algorithm. The invention further discloses an air conditioner.

Description

technical field [0001] The invention relates to the technical field of electrical appliances, in particular to an intelligent power module and an air conditioner with the intelligent power module. Background technique [0002] In the related technology, the intelligent power module integrates the power switch MOSFET tube device and the high-voltage drive circuit, and wins a growing market with its advantages of high integration and high reliability, especially suitable for drive motor inverters and various An inverter power supply. [0003] like figure 1 As shown, in the intelligent power module in the related art, the power switch MOSFET tube device IGBT tube and the fast recovery diode FRD used for the freewheeling effect are usually used together. In order to reduce the power loss of the power switch MOSFET tube device, it is necessary to improve the IGBT The turn-on rate of the tube and the choice of a diode with a smaller forward voltage drop. However, the existing p...

AI Technical Summary

Problems solved by technology

However, the existing problem is that the increase of the turn-on rate of the IGBT tube will lead to the increase of the current noise, and the smaller the forward voltage drop of the diode, the greater the current noise, and the excessive current noise will easily cause interference to the circuit system and cause circuit errors. action, or even damage the circuit system

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