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cu/sio 2 Composite material, its preparation method and preparation method of copper-ceramic substrate

A technology of ceramic substrates and composite materials, which can be used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve the problems of insufficient bonding strength between the seed layer of DPC substrate and the ceramic substrate.

Active Publication Date: 2020-08-11
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method also has the problem of insufficient bonding strength between the DPC substrate seed layer and the ceramic substrate

Method used

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  • cu/sio <sub>2</sub> Composite material, its preparation method and preparation method of copper-ceramic substrate

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Experimental program
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preparation example Construction

[0022] At present, the DPC substrate needs to overcome the low reaction ability between the seed layer and the ceramic substrate, and the easy generation of pores makes the bonding strength lower. Therefore, this application provides a Cu / SiO 2 The preparation method of composite material, and provide the Cu / SiO that utilizes this preparation 2 A method for preparing a copper-ceramic substrate from a composite material, which can realize high-strength bonding between copper and ceramics at a lower temperature. Therefore, the present application provides an embodiment of the present invention disclosing a Cu / SiO 2 The preparation method of composite material, comprises the following steps:

[0023] The Cu / SiO 2 composite material.

[0024] In the preparation of Cu / SiO 2 In the process of composite materials, the raw materials used include protective agent, copper salt, nano-silicon dioxide and reducing agent. The sources of the above raw materials are not particularly limit...

Embodiment 1

[0036] Add 40 mass parts of copper salt, 15 mass parts of nano silicon dioxide, 30 mass parts of cetyltrimethylammonium bromide (CTAB) in the reactor, add 15 mass parts of hydrazine hydrate after mixing, React at a temperature of 200°C for 1 to 2 hours to obtain nano-Cu / SiO 2 composite material. Cu / SiO prepared in this embodiment 2 The particle size of the composite material is 20-100nm.

[0037] Nano Cu / SiO in the following examples 2 Composite materials were prepared according to the method of Example 1.

Embodiment 2

[0039] Material: Nano Cu / SiO 2 The size of the composite material is 20-50nm, and the organic solvent is ethyl acetate and isopropanol;

[0040] Craftsmanship:

[0041] 1) put nano Cu / SiO 2 Composite material and organic solvent are mixed and stirred evenly according to the mass ratio of 80:20 to make nano-copper paste;

[0042] 2) Surface cleaning: ultrasonically clean the alumina ceramic substrate for 10 minutes and then dry it;

[0043] 3) Print coating and drying: use a screen printing device to coat the nano-copper paste on the surface of the alumina ceramic substrate, and dry it in vacuum for 20 minutes to obtain a nano-copper paste layer with a thickness of 200 microns;

[0044] 4) Sintering: put the alumina ceramic substrate with nano-copper paste layer into a sintering furnace, sinter at 350°C for 60 minutes under the protection of nitrogen, and then cool to obtain a copper-ceramic substrate containing a nano-copper metal circuit layer;

[0045] 5) Make metal copp...

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Abstract

The invention provides a preparation method of a Cu / SiO2 composite material. The preparation method comprises the following steps that copper salt, nanometer silicon dioxide, a reducing agent and a protecting agent are subjected to a hydrothermal reaction, and the Cu / SiO2 composite material is obtained. The invention further provides a method for preparing a copper-ceramic substrate by using the Cu / SiO2 composite material. The method comprises the steps that the Cu / SiO2 composite material is mixed with an organic solvent, and nanometer copper paste is obtained; the nanometer copper paste is printed on the surface of a ceramic substrate, then subjected to sintering, and finally subjected to photoetching, developing and electroplating in sequence, so that the copper-ceramic substrate is obtained. In the process that the copper-ceramic substrate is prepared, because the Cu / SiO2 composite material has a nanometer size effect, and the nanometer silicon dioxide in the Cu / SiO2 composite material can be reacted with aluminum oxide and aluminum nitride in the ceramic substrate, high-strength bonding between copper and ceramic can be achieved at a low sintering temperature.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to Cu / SiO 2 Composite material, its preparation method and the preparation method of copper-ceramic substrate. Background technique [0002] For power electronic packaging, due to its high thermal conductivity, the ceramic substrate allows heat to be exported from the chip to realize electrical interconnection and heat exchange with the outside world, and also has the functions of wiring (point interconnection) and mechanical support. Currently commonly used heat dissipation substrates mainly include LTCC, HTCC, DBC and DPC ceramic substrates. The internal metal circuit layer of LTCC and HTCC substrates is made by screen printing process, which is prone to rough circuit, inaccurate alignment and shrinkage ratio problems, and its application in high thermal conductivity, high power density, high voltage and high current environments is limited. [0003] The DBC substra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F9/24B22F1/02B82Y40/00H01L21/48
Inventor 崔成强赖韬杨斌张昱
Owner GUANGDONG UNIV OF TECH