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Preparation method for copper-ceramic base plate

A ceramic substrate and nano-copper technology, which is applied in the direction of improving the metal adhesion of insulating substrates, circuit substrate materials, and printed circuit manufacturing, and can solve the problems of insufficient bonding strength between the seed layer of the DPC substrate and the ceramic substrate.

Active Publication Date: 2017-12-15
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method also has the problem of insufficient bonding strength between the DPC substrate seed layer and the ceramic substrate

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  • Preparation method for copper-ceramic base plate

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preparation example Construction

[0019] At present, the DPC substrate needs to overcome the problem of low reactivity between the seed layer and the ceramic substrate, and the easy generation of pores that reduces the bonding strength. Therefore, this application provides a method for preparing a copper-ceramic substrate. The preparation method adopts nano-copper powder, Nano silicon dioxide realizes high-strength bonding between copper and ceramics at low temperature and pressure. Therefore, the present application provides an embodiment of the present invention disclosing a method for preparing a copper-ceramic substrate, comprising the following steps:

[0020] Mix nano-copper powder, nano-silica and organic solvent to obtain nano-copper paste;

[0021] Coating the nanometer copper paste on the surface of the ceramic substrate, sintering, and finally performing photolithography, development, electroplating and etching in sequence to obtain the copper-ceramic substrate.

[0022] According to the present in...

Embodiment 1

[0031] Material: 5nm~50nm nano copper powder, 5nm~30nm nano SiO 2 Powder, organic solvents are ethyl acetate, isopropanol;

[0032] Craftsmanship:

[0033] 1) Put nano-copper powder, nano-SiO 2 The powder and organic solvent are mixed and stirred evenly according to the mass ratio of 80:2:18 to make nano-copper paste;

[0034] 2) Surface cleaning: ultrasonically clean the alumina ceramic substrate for 10 minutes and then dry it;

[0035] 3) Coating and drying: coating the nano-copper paste on the surface of the alumina ceramic substrate, and vacuum drying for 20 minutes to obtain a nano-copper paste layer with a thickness of 200 microns;

[0036] 4) Sintering: put the alumina ceramic substrate with nano-copper paste layer into a sintering furnace, sinter at 350°C for 60 minutes under the protection of nitrogen, and then cool to obtain a copper-ceramic substrate;

[0037] 5) Making circuit: Coating photoresist on the ceramic substrate, then developing according to the circu...

Embodiment 2

[0041] Material: 5nm~20nm nano copper powder, 5nm~20nm nano SiO 2 Powder, organic solvents are ethyl acetate, isopropanol;

[0042] Craftsmanship:

[0043] 1) Put nano-copper powder, nano-SiO 2 The powder and organic solvent are mixed and stirred evenly according to the mass ratio of 75:5:20 to make nano-copper paste;

[0044] 2) Surface cleaning: ultrasonically clean the aluminum nitride ceramic substrate for 10 minutes and then dry it;

[0045] 3) Coating and drying: Coating the nano-copper paste on the surface of the aluminum nitride ceramic substrate and drying it in vacuum for 20 minutes to obtain a nano-copper paste layer with a thickness of 300 microns;

[0046] 4) Sintering: put the aluminum nitride ceramic substrate with a nano-copper paste layer into a sintering furnace, sinter at 300°C for 60 minutes under the protection of nitrogen, and then cool to obtain a copper-ceramic substrate;

[0047] 5) Making circuit: Coating photoresist on the ceramic substrate, then...

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Abstract

The invention provides a preparation method for a copper-ceramic base plate. The preparation method comprises the following steps: mixing copper nanoparticle, nanometer silicon dioxide and organic solvent, thereby acquiring nanometer copper paste; coating the nanometer copper paste onto the surface of a ceramic base plate and then sintering; and lastly, performing photoetching, developing, electroplating and etching in turn, thereby acquiring the copper-ceramic base plate. In the process of preparing the copper-ceramic base plate according to the invention, the high strength bonding between the cooper and the ceramic is realized under the lower sintering temperature due to the nanometer size effect of the copper nanoparticle and the nanometer silicon dioxide and the reaction of the nanometer SiO2 and the aluminum oxide and aluminum nitride in the ceramic base plate.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to a method for preparing a copper-ceramic substrate. Background technique [0002] For power electronic packaging, due to its high thermal conductivity, the ceramic substrate allows heat to be exported from the chip to realize electrical interconnection and heat exchange with the outside world, and also has the functions of wiring (point interconnection) and mechanical support. Currently commonly used heat dissipation substrates mainly include LTCC, HTCC, DBC and DPC ceramic substrates. The internal metal circuit layer of LTCC and HTCC substrates is made by screen printing process, which is prone to rough circuit, inaccurate alignment and shrinkage ratio problems, and its application in high thermal conductivity, high power density, high voltage and high current environments is limited. [0003] The DBC substrate has good performance and is suitable for high withstand...

Claims

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Application Information

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IPC IPC(8): C04B41/88H05K1/03H05K3/00H05K3/38
CPCC04B41/009C04B41/5127C04B41/88C04B2111/00008C04B2111/00844H05K1/0306H05K3/0011H05K3/38C04B35/10C04B35/581C04B41/5035C04B41/4539C04B41/0054
Inventor 崔成强赖韬杨斌张昱
Owner GUANGDONG UNIV OF TECH