Improved epitaxial growth between gates

Abstract

An integrated circuit device includes at least two epitaxially grown active regions grown onto a substrate, the active regions being placed between a first gate device and a second gate device. The integrated circuit device includes at least one dummy gate between the two epitaxially grown active regions and between the first gate device and the second gate device, wherein each active region is substantially uniform in length. The first gate device and the second device are formed over a first well having a first conductivity type and the dummy gate is formed over a second well having a secondconductivity type. The invention also provides a method of forming an electrostatic discharge (ESD) device.

Description

technical field [0001] Embodiments of the present invention generally relate to the field of semiconductors, and more particularly, to electrostatic discharge devices and methods of forming the same. Background technique [0002] Electronic devices utilizing integrated circuits are susceptible to electrostatic discharge (ESD). Electrostatic discharge can occur from persons handling the device or from other sources. Electrostatic discharge can damage circuits by passing large amounts of current through circuits sensitive to such high currents. To reduce susceptibility to ESD damage, integrated circuits often include ESD devices that keep ESD away from sensitive circuitry. [0003] One type of ESD device involves multiple active regions, such as source or drain regions, located between elongated gate devices. Gate devices are used for the gates of transistors. Transistors act as switches, activated when high currents such as ESD are detected. The activation switch allows ...

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Problems solved by technology

If a silicide layer forms there, the current flowing through the source and drain regions will tend to move primarily through the silicide, which can lead to damage as the current density created by the...

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