Inorganic halogenated bismuth perovskite battery and preparation method thereof

A perovskite cell, perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as stability hindering the commercialization of perovskite cells, device damage, etc., to avoid expensive high-altitude evaporation equipment. The effect of using, reducing production costs and improving efficiency

Inactive Publication Date: 2018-07-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, organic perovskite light-absorbing materials such as CH 3 NH 3 PB 3 , it is easily decomposed by water vapor in the air and causes damage to the device, and the stability problem has become the biggest obstacle hindering the commercialization of perovskite batteries

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  • Inorganic halogenated bismuth perovskite battery and preparation method thereof
  • Inorganic halogenated bismuth perovskite battery and preparation method thereof
  • Inorganic halogenated bismuth perovskite battery and preparation method thereof

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Embodiment Construction

[0038] The disclosure provides an inorganic bismuth halide perovskite battery and a preparation method thereof. The all-inorganic perovskite light-absorbing layer with stable physical and chemical properties is used to replace the toxic lead component in the traditional perovskite light-absorbing layer, which not only improves calcium The stability of titanium battery in the air is conducive to the industrial production of efficient, stable and safe perovskite battery.

[0039] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0040] In the first embodiment of the present disclosure, an inorganic bismuth halide perovskite battery and a preparation method thereof are provided. The inorganic bismuth halide perovskite battery in this embodiment will first be described in detai...

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Abstract

The invention provides an inorganic halogenated bismuth perovskite battery, comprising a transparent conductive substrate, an electron transport layer formed on the transparent conductive substrate, aperovskite light absorption layer formed on the electron transport layer, a hole transport layer formed on the perovskite light absorption layer and an electrode formed on the hole transport layer. The material of the perovskite light absorption layer is Cs2XBiY6, wherein X=Ag, Na, K or Rb, and Y=Cl, Br or I. A preparation method of the inorganic halogenated bismuth perovskite battery is furtherprovided, which is simple and easy to repeat. A fully inorganic perovskite light absorption layer with stable physical and chemical properties is used to replace the toxic lead component in the traditional perovskite light absorption layer, which not only improves the stability of the perovskite battery in the air, but also is beneficial to the industrial production of the efficient, stable and safe perovskite battery.

Description

technical field [0001] The disclosure relates to the technical field of optoelectronic materials and devices, in particular to an inorganic bismuth halide perovskite battery and a preparation method thereof. Background technique [0002] Perovskite cells have the advantages of low cost, high efficiency and strong plasticity, which has attracted great attention in the field of photovoltaic devices. At present, the notarized efficiency of single-junction cells has increased to 22.1%, surpassing the crystalline silicon cells that dominate the photovoltaic market. In addition, the efficiency of cells connected in series with silicon materials has exceeded 25%, and further optimization can reach 30%. Therefore, with the increase of photoelectric conversion efficiency and the development of industrial deposition technology, perovskite cells have broad application prospects in industrial production. However, organic perovskite light-absorbing materials such as CH 3 NH 3 PB 3 , ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K30/151H10K30/10Y02E10/549
Inventor 袁国栋刘文强王琦王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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