Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Buffer layer ink and preparation method thereof

A buffer layer and ink technology, applied in ink, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as limited blocking effect, component performance impact, electrical component electrical performance impact, etc., to achieve the effect of improving performance

Inactive Publication Date: 2018-07-24
SHANGHAI MI FANG ELECTRONICS LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although this buffer layer can be cross-linked, its barrier effect is limited, and there will still be a small amount of solvent penetration, which will affect the performance of the entire component, and the preparation of this buffer layer requires ultraviolet treatment, which in addition to increasing the cost In addition, it will have an uncertain impact on the electrical performance of electrical components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Buffer layer ink and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The second aspect of the present disclosure: provide a method for preparing an ink for making a buffer layer of a flexible organic photovoltaic thin film device, including: epoxy resin glue, nano-zinc oxide and an organic solvent; wherein, the epoxy resin glue and nano-zinc oxide mixed with an organic solvent to obtain an ink; wherein, the concentration of the epoxy resin glue is 2-60mg / mL, and the concentration of the nano-zinc oxide is 5-75mg / mL; preferably, the concentration of the epoxy resin glue 5-40mg / mL, and the concentration of the nanometer zinc oxide is 10-50mg / mL.

[0036] According to the second aspect of the present disclosure, the organic solvent is well known to those skilled in the art. It is used to dissolve epoxy resin glue and disperse nano-zinc oxide. Generally, an organic solvent with a boiling point below 200°C is used, for example, it can be selected from methanol, At least one of ethanol, butanol, isopropanol, ethylene glycol methyl ether acetat...

Embodiment 1

[0052] Weigh 90mg of epoxy resin glue and add it into 5mL reagent bottle A, measure 1mL isopropanol into reagent bottle A, stir to dissolve. Weigh 30mg of ZnO (particle size less than 10nm) into a reagent bottle, measure 1mL of isopropanol into reagent bottle B, and ultrasonically disperse under the condition of 10-60kHz for 5-30min. The solutions in reagent bottle A and reagent bottle B were mixed at a volume ratio of 1:10, ultrasonicated for 5 minutes, and then filtered with a 0.22 μm filter head to obtain ink. The specific composition is shown in Table 1.

[0053] Put the ink into the ink cartridge, and use an inkjet printer to stably eject the ink film. After heating and cross-linking at 120°C, a dense cross-linked film can be formed, which can prevent the penetration of the upper ink. The specific inkjet performance is shown in the table 2. The buffer layer made of this ink can meet the use standard, which can not only block the penetration of silver ink but also transmit...

Embodiment 2-8

[0055] The preparation steps of Examples 2-8 are basically the same as those of Example 1. The specific composition is shown in Table 1, and the specific properties of the ink are shown in Table 2. The buffer layer made by the ink prepared in Examples 2-8 can reach the use standard, and can block The penetration of the silver ink can in turn transport electrons.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to ink for producing a flexible organic photovoltaic film device buffer layer as well as a preparation method and application thereof and a buffer layer. The ink for producing the flexible organic photovoltaic film device buffer layer is prepared from epoxy resin glue, nano zinc oxide and an organic solvent. The buffer layer provided by the invention has electron transport characteristics, the solvent of the ink does not damage an active layer in a photovoltaic device, the film can be self cross-linked, the ink which is sprayed later does not penetrate the film, and the buffer layer is not dissolved even when the upper layer is heated.

Description

technical field [0001] The present disclosure relates to the technical field of organic photovoltaic devices, and in particular, relates to an ink for making a buffer layer of a flexible organic photovoltaic thin film device, its preparation method and application, and a buffer layer prepared by using the ink through the preparation method. Background technique [0002] Compared with inorganic solar cells, organic photovoltaic (OPV) devices have the advantages of low cost, thin thickness, light weight, simple manufacturing process, and can be made into large-area flexible devices. They have broad development and application prospects and have become One of the most dynamic and vibrant research frontiers in the field of new materials and new energy. [0003] As far as the preparation process is concerned, the preparation process of inorganic photovoltaic devices that is widely used in industry at present mostly adopts the vacuum evaporation method. Due to the requirements of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/102C09D11/03C09D11/033H01L51/48
CPCC09D11/03C09D11/033C09D11/102C09D11/30C09D11/36C09D11/38H10K71/13H10K71/135H10K71/12H10K30/80Y02E10/549Y02P70/50
Inventor 李胜夏蓝河
Owner SHANGHAI MI FANG ELECTRONICS LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products