Graphene field effect transistor array biosensor and preparation method and detection method thereof

A field-effect transistor, array biology technology, applied in instruments, measuring devices, scientific instruments, etc., can solve problems such as low accuracy and separation of objects to be measured.

Active Publication Date: 2018-12-07
HARBIN ENG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to provide a kind of graphene field effect transistor array biosensor and its preparation method and detection method; To solve the problem that the existing graphene field effect transistor biosensor all uses a

Method used

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  • Graphene field effect transistor array biosensor and preparation method and detection method thereof
  • Graphene field effect transistor array biosensor and preparation method and detection method thereof
  • Graphene field effect transistor array biosensor and preparation method and detection method thereof

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specific Embodiment approach 1

[0043] Specific implementation mode one: the following combination figure 1 This embodiment will be specifically described. The graphene field effect transistor array biosensor of the present embodiment consists of a silicon substrate 1, an oxide layer 2, a first metal gate 3-1, a second metal gate 3-2, a gate insulating layer 4, a first graphene conductive The channel layer 5-1, the second graphene conductive channel layer 5-2, the first group of source and drain electrodes 6-1 and the second group of source and drain electrodes 6-2 are composed of:

[0044] An oxide layer 2 is provided on the silicon substrate 1, a first metal gate 3-1 and a second metal gate 3-2 are symmetrically provided on the oxide layer 2, and the first metal gate 3-1 and the second metal gate 3-2 is provided with a gate insulating layer 4 outside, and the gate insulating layer 4 completely covers the first metal gate 3-1 and the second metal gate 3-2, and the gate insulating layer 4 is symmetrically p...

specific Embodiment approach 2

[0049] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the material of the first metal grid 3-1 and the second metal grid 3-2 is Ti / Pt, wherein the thickness of Ti is 100nm ~110nm, the thickness of Pt is 200nm~210nm. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0050] Specific embodiment three: the preparation method of a kind of graphene field effect transistor array biosensor of present embodiment is carried out according to the following steps:

[0051] 1. Production of transistor structure:

[0052] a. Silicon substrate cleaning:

[0053] Cleaning the silicon wafer to obtain a silicon substrate 1;

[0054] b. Thermal oxidation growth of SiO 2 As an insulating layer:

[0055] The silicon substrate 1 is sequentially subjected to dry oxygen oxidation, wet oxygen oxidation and dry oxygen oxidation, specifically according to the following steps: under the conditions of a temperature of 1050° C. to 1055° C. and an air velocity of 24 cm / s to 26 cm / s, Dry oxygen oxidation for 4 minutes to 6 minutes, then wet oxygen oxidation for 5 minutes to 7 minutes at a temperature of 1050°C to 1055°C and an air velocity of 0.8 cm / s to 1.2 cm / s, and finally at a temperature of 1050°C to 1055°C and Under the condition of air velocity of 24 cm / s-26 ...

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Abstract

The invention relates to a graphene field effect transistor array biosensor and a preparation method and a detection method thereof. The invention relates to a biosensor and a preparation method and adetection method thereof, aiming at solving the problem of relatively low accuracy in the detection process of the existing graphene field effect transistor array biosensor. The sensor comprises a silicon substrate, an oxidization layer, a first metal grid electrode, a second metal grid electrode, a gate insulating layer, a first graphene conductive channel layer, a second graphene conductive channel layer, a first group source, a leakage electrode, a second group source and a leakage electrode; the preparation method comprises the following steps: I. making a transistor structure; II. performing aldehyde treatment on the graphene surface; III. modifying a detection unit graphene surface to capture antibody molecules; and IV. closing the remaining active sites on the graphene surfaces ofa detection unit and a reference unit; the detection method comprises the following steps: soaking the sensor in a solution containing be-detected antigen, and detecting the voltage at the graphene dirac point of the detection unit and the reference unit, to obtain the absolute concentration of the to-be-detected substance solution, wherein a difference value corresponds to a standard working curve.

Description

technical field [0001] The invention relates to a biosensor, a preparation method and a detection method thereof. Background technique [0002] At present, the means of biological detection mainly include flow cytometer, PCR instrument, and immune kit. Flow cytometry detection and PCR detection require cell (or DNA) extraction, culture, and labeling, which not only takes a long period but also has huge equipment, which obviously cannot meet military needs. The detection of immunological kits requires a variety of reagents, and each reagent added in the process must be washed repeatedly, which requires high operating skills. In addition, the above methods all use fluorescent labeling and enzyme labeling detection. The luminescent functional groups of fluorescent dyes and enzymes are unstable and are easily affected by environmental factors. They have strict requirements on the operating environment and are not suitable for on-site environmental testing. Field-effect transis...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/414
Inventor 夏露刘智辉程鑫王成杨李玉玲刘志远
Owner HARBIN ENG UNIV
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