Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Positive electrode of crystalline silicon solar cell with gate breaking prevention function

A technology of solar cells and positive electrodes, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of unsatisfactory ratio of broken grids, and achieve the effect of improving battery efficiency, reducing the probability of grid breaking, and simple structure design.

Pending Publication Date: 2018-12-18
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD +1
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the conventional anti-broken grid design can reduce the chance of grid breakage when the battery is printed on the front side, as the components have higher and higher requirements on battery quality, the proportion of broken grids caused by the conventional design can no longer meet the requirements of the market. Therefore, it is necessary to There is a more reasonable and practical design to reduce the proportion of broken grids

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive electrode of crystalline silicon solar cell with gate breaking prevention function
  • Positive electrode of crystalline silicon solar cell with gate breaking prevention function
  • Positive electrode of crystalline silicon solar cell with gate breaking prevention function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Such as Figure 1 to Figure 7 The shown positive electrode of the crystalline silicon solar cell with the anti-broken grid function includes a positive electrode main grid 1, a positive electrode fine grid 2 and an anti-broken grid structure 3, and the anti-broken grid structure 3 and the positive electrode fine grid 2 are integrally printed and formed, The anti-broken grid structure 3 is an octagon with a hollow groove 4 on the back. The anti-broken grid structure 3 is composed of a rectangular grid segment 31 located in the middle and two sides located on both sides of the rectangular grid segment 31 and arranged symmetrically with the rectangular grid segment 31 as the center. Two sections of isosceles trapezoidal grid section 32 are composed, the rectangular grid section 31 straddles the positive electrode main grid 1, and the left and right ends of the rectangular grid section 31 protrude outside the positive electrode main grid 1, and the protruding grid section is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a positive electrode of a crystalline silicon solar cell with a gate breaking prevention function, the positive electrode includes a positive electrode main gate, a positive electrode fine gate and a gate breaking prevention structure, the gate breaking prevention structure and the positive electrode fine grate are integrally printed and formed, the gate breaking preventionstructure is an octagonal shape with a hollow groove on the back surface, the gate breaking prevention structure is composed of a rectangular gate section located in the middle and two isosceles trapezoidal gate sections located on both sides of the rectangular gate section and symmetrically arranged around the rectangular gate section as the center, the rectangular gate segments span the main gate of the positive electrode, and the left and right ends of the rectangular gate section extend out of the main gate of the positive electrode, and the protruding gate section is a rectangular epitaxial gate breaking prevention section, the two ends of the isosceles trapezoidal gate section are in contact with the epitaxial gate breaking prevention section and the positive electrode fine gate respectively, and the hollowed-out groove is located in the isosceles trapezoidal gate section or spans the epitaxial gate breaking prevention section and the isosceles trapezoidal gate section. The gatebreaking prevention design in the positive electrode combines octagonal and hollow grooves, the gate breaking probability can be effectively reduced when the positive electrode is printed on the front electrode.

Description

technical field [0001] The invention relates to a solar cell structure, in particular to a positive electrode of a crystalline silicon solar cell with the function of preventing grid breaking. Background technique [0002] The positive electrode design of crystalline silicon solar cells includes a main grid and a thin grid perpendicular to the main grid. The function of the thin grid is to collect the photo-generated current to the main grid. Phenomenon, it will affect the collection of photogenerated current and affect the efficiency of the battery. Modules are made of battery sheets with broken grids, and hot spots of local heating will appear at the broken grids, which will affect the life of the components. [0003] There are many reasons for grid breakage during solar cell printing, such as incorrect setting of screen parameters, mismatch between the line width of the screen and the slurry, clogging of the screen, wear of the scraper, excessive viscosity or drying of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/028H01L31/04
CPCH01L31/022425H01L31/028H01L31/04H01L31/022433H01L31/1804Y02P70/50H01L31/068H01L31/0512Y02E10/547
Inventor 林纲正丰明璋方结彬陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products