A method for regulating randomness of conductive paths of a conductive bridge memory

Abstract

A method for regulating randomness of a conductive path of a conductive bridge memory is provided. The invention relates to a conductive bridge memory device of a general inert upper electrode / resistive functional layer / high thermal conductivity thin layer / active lower electrode structure. Forming a conductive path in the oxide and the high thermal conductivity thin layer by applying a positive voltage at the lower electrode; as that voltage is apply in the reverse direction, the conductive paths in the device without the high thermal conductivity layer rapidly and violently break when the temperature reaches the highest point, and the conductive paths in the device with the high thermal conductivity layer can not be completely broken when the voltage is applied in the reverse direction; as that positive voltage is apply to the lower electrode again, the conductive path in the device without adding the high thermal conductivity thin layer are randomly formed, and the conductive paths in the device with adding the high thermal conductivity thin layer are preferentially formed at the residual part again, thereby realizing the regulation of the conductive paths in the resistive variable memory based on the conductive bridges. The scheme provided by the invention is simple and easy to operate, and is convenient to realize the regulation of the conductive path of the conductive bridge memory.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method for regulating the randomness of the conduction path of the conduction bridge memory. Background technique [0002] Because of the advantages of high storage density and low cost, silicon-based flash memory represents the most advanced non-volatile memory and occupies the largest share of the current memory market. However, flash memory suffers from the disadvantages of low operating speed, poor endurance, and high writing voltage and will reach their physical limits in the near future, so various new random access memory concepts have been proposed. Resistive memory has become one of the candidates for the next generation of non-volatile memory due to its advantages of simple structure, small size, fast operation speed, low power consumption, and good durability. Conductive bridge memory usually uses active metal electrodes (such as Ag, Cu, etc.) and inert metal electro...

AI Technical Summary

Problems solved by technology

However, this method has very high requirements on equipment, technology, and operation, and the process is relatively complicated, which is not conducive to the popularization and use of devices. Therefore, the present invention proposes a simple and easy-to-operate solution to realize the regulation of the conductive path

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