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Method for real-time monitoring of igbt solder layer

A real-time monitoring, solder layer technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problem of not being able to monitor the health status of the solder layer in real time

Active Publication Date: 2021-02-09
HEFEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

None of the above methods can monitor the health status of the solder layer in real time

Method used

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  • Method for real-time monitoring of igbt solder layer
  • Method for real-time monitoring of igbt solder layer
  • Method for real-time monitoring of igbt solder layer

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Experimental program
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Embodiment Construction

[0057] The present invention will be further described below in conjunction with drawings and embodiments.

[0058] The IGBT chip is the heat source of the power device. Its heat conduction is from the chip to the substrate U06 through the solder layer. It has a certain heat conduction angle, and the heat conduction angle is generally 45 degrees. When there is a defect in the solder layer, the temperature gradient of each layer below the chip will change. However, there is a linear relationship between the size of the solder layer defect and the temperature change.

[0059] The IGBT solder layer is monitored in real time by using a temperature gradient-based real-time monitoring device for the state of the IGBT solder layer.

[0060] refer to figure 1 , a real-time monitoring device for the state of the IGBT solder layer based on a temperature gradient, including a power supply module U01, a temperature sensor module U02, an ADC module U03, an MCU module U04, and an informat...

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Abstract

A device and method for real-time monitoring of the state of an IGBT solder layer based on a temperature gradient. The device includes a power supply module, a temperature sensor module, an ADC module, an MCU module and an information display module; the temperature sensor module is connected to the ADC module, the ADC module is connected to the MCU module, and the MCU module is connected to the information display module. The invention also includes a method for real-time monitoring of the solder layer by using a temperature gradient-based real-time monitoring device for the state of the IGBT solder layer. The present invention locates the aging type and position of the solder layer through the symbol of the element in the variation matrix of the temperature gradient matrix and the thermal conduction angle, the detection method is simple to implement, is not affected by the change of the ambient temperature, has high detection accuracy, and has better real-time performance. Can detect solder layer voids and cracks on-line.

Description

technical field [0001] The invention relates to a method for real-time monitoring of an IGBT solder layer, in particular to the real-time diagnosis of the size and position of solder layer voids and cracks of an insulated gate double-click transistor (IGBT), and is mainly used in the technical field of power IGBT reliability. Background technique [0002] Insulated gate bipolar transistor (IGBT) combines the advantages of field effect transistor (MOSFET) and bipolar transistor (BJT), and has the characteristics of simple drive, low loss, high voltage resistance, etc. Widely used, in many occasions where IGBTs are used, IGBTs are required to have high reliability. [0003] In recent years, with the popularization of IGBT use, the reliability of IGBT has become more and more important. IGBT aging failure has been proved to be a main failure mode of its failure under temperature cycle. When the power module is running stably, the device basically maintains thermal stability, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 何怡刚周健波李兵
Owner HEFEI UNIV OF TECH