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Electron Spin-Based Polymorphic True Random Number Generator

A true random number and generator technology, applied in the field of information security, can solve the problems of low integration, low efficiency, large size, etc., and achieve the effects of high radiation resistance, strong anti-interference ability and simple structure

Active Publication Date: 2021-08-24
武汉华芯纳磁科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) looks random;
[0006] (2) The sequence is unpredictable;
[0009] 1) Unpredictability;
[0010] 2) cannot be repeated;
The security of pseudo-random numbers is much worse, and it cannot be compared with true random numbers at all.
Generally, the high-quality random sequences generated by circuit-based random number generators are slow and inefficient, and cannot meet the needs of rapid social development; quantum random number generators are fast, but large in size and difficult to integrate degree is not high

Method used

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  • Electron Spin-Based Polymorphic True Random Number Generator
  • Electron Spin-Based Polymorphic True Random Number Generator
  • Electron Spin-Based Polymorphic True Random Number Generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 2 As shown, this embodiment provides a multi-state true random number generator based on electron spins of magnetic materials, the easy magnetization direction of the magnetic material layer is in the z-axis direction, and it has a multi-layer film structure.

[0041] The direct reading resistance structure based on the SOT effect is a structure in which the Hall resistance is directly read and the easy magnetization direction is on the z-axis. A magnetic material layer made of a ferromagnetic material, an insulating layer made of an insulating material, and a capping layer; the spin current generating layer is used to generate a spin current, and acts on the magnetic domain of the magnetic material through the SOT effect, and the magnetic The material layer is the core structure of the device, and different magnetization states correspond to different resistance states; the insulating layer is used to provide perpendicular magnetic anisotropy, so that t...

Embodiment 2

[0047] Such as image 3 As shown, this embodiment provides a multi-state true random number generator based on electron spins of magnetic materials, the easy magnetization direction of the ferromagnetic layer is in the z-axis direction, and has a multi-layer film structure. The structure of using MTJ or spin valve to read the resistance based on the SOT effect is a structure in which the reading and writing operation is performed through the MTJ or spin valve structure and the easy magnetization direction is on the z-axis, and the spin current generation layer is in turn from bottom to top , a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer, a pinning layer, and a capping layer; The film surfaces of the magnetic layer, the second ferromagnetic layer, the pinning layer and the capping layer are polygonal or elliptical in the same size, and are stacked in the middle of the elongated spin current generation layer in sequence, so that the spin current...

Embodiment 3

[0054] Such as Figure 5 As shown, this embodiment provides a multi-state true random number generator based on the electron spin of a ferromagnetic material, which has a multi-layer thin film structure, and the easy magnetization direction of the direct read resistance structure based on the thermal effect is arbitrary, From bottom to top, there are metal layer, magnetic material layer, insulating layer, and capping layer. The metal layer has a Hall Bar structure, and its film surface is in the shape of a cross; the film surfaces of the magnetic material layer, insulating layer, and capping layer are of the same size. The polygon or ellipse, and overlapped in turn on the cross-shaped intersection of the metal layer, the random number generator has four electrode ports of the first electrode, the second electrode, the third electrode and the fourth electrode, which are used to pass current or The material of the metal layer is Cu, Al, Au, Pt, Ta; the material of the magnetic m...

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Abstract

The invention discloses a multi-state true random number generator based on electron spin, which includes a film layer overlapping arrangement structure based on magnetic materials to generate true random numbers. The structure includes a structure based on SOT effect or a structure based on thermal effect. Structure; not only has true randomness, but also has the characteristics of small size, simple structure, high-speed and high-efficiency generation of high-quality random number sequences, high anti-radiation performance, and strong anti-interference ability.

Description

technical field [0001] The present invention relates to the field of information security, and more specifically, proposes a multi-state true random number generator based on magnetic material electron spin, which can be used for numerical simulation, cryptography, etc., and provides more information for the field of information security. High-quality random numbers. Background technique [0002] We know that random numbers are widely used and play a pivotal role in the field of information security, and the quality of random numbers used even determines the performance of security systems. Pseudo-random number generators and true random number generators of general quality have gradually been unable to meet the needs of a rapidly developing society and the explosive growth of information that needs to be protected. With the further development of computer technology, communication technology, and the popularization of the Internet, the circulation of information has become...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F7/58
CPCG06F7/588
Inventor 宋敏
Owner 武汉华芯纳磁科技有限公司
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