A light-emitting diode epitaxial wafer and its preparation method

Abstract

The invention discloses an LED epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The method includes the steps of: providing a substrate; sequentially depositing a buffer layer, an undoped GaN layer and an N-type GaN-doped layer on the substrate; depositing a multiple quantum well layer on the N-type GaN-doped layer, wherein the multiple quantum well layer comprises a plurality of stacked quantum well layers, each quantum well layer comprises a well layer and a barrier layer stacked on the well layer, each well layer comprises a first InGaNlayer, each barrier layer comprises an AlInGaN layer and a GaN layer stacked on the AlInGaN layer, the AlInGaN layers of the barrier layers in the quantum well layers are close to the well layers, and the well layers, in the quantum well layers, closed to the N-type GaN-doped layer are in contact with the N-type GaN-doped layer; and depositing an electron blocking layer, a P-type GaN layer and aP-type contact layer in order on the multiple quantum well layer. The LED epitaxial wafer and the preparation method thereof can avoid generation of the piezoelectric effect in the MQW layer to improve the efficiency of generation of the radiation and recombination of electrons and holes.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A GaN (gallium nitride)-based LED (Light Emitting Diode, light emitting diode) generally includes an epitaxial wafer and electrodes prepared on the epitaxial wafer. The epitaxial wafer usually includes: a substrate, a buffer layer sequentially stacked on the substrate, an undoped GaN layer, an N-type doped layer, an MQW (Multiple Quantum Well, multiple quantum well) layer, an electron blocking layer, a P-type GaN layer and P-type contact layer. When a current flows, the electrons in the N-type region such as the N-type doped layer and the holes in the P-type region such as the P-type GaN layer enter the MQW active region and recombine to emit visible light. A conventional MQW layer consists of an InGaN quantum well / GaN quantum barrier superlattice. [0003] In the proc...

AI Technical Summary

Problems solved by technology

The polarized electric field reduces the wave function overlap rate of electrons and holes in the quantum well, that is, the efficiency of radiative recombination of electrons and holes decreases, which in turn affects the internal quantum efficiency of the LED.

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