Unlock instant, AI-driven research and patent intelligence for your innovation.

Device and method for making the device

A device and semiconductor technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of reduced yield, poor processability of semiconductor wafers, etc.

Active Publication Date: 2022-03-22
OSRAM OPTO SEMICON GMBH & CO OHG
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This undesired deformation can lead to: the semiconductor wafer rolls up, thereby making the processability of the semiconductor wafer worse and reducing the yield as a whole

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for making the device
  • Device and method for making the device
  • Device and method for making the device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] exist figure 1 An embodiment of the device 100 is schematically shown in cross-sectional view in . The component 100 has a carrier 1 and a semiconductor body 2 arranged on the carrier 1 . The semiconductor body 2 directly adjoins the carrier 1 . The carrier 1 differs in particular from the growth substrate. The semiconductor body 2 has a first semiconductor layer 21 of the first conductivity type facing away from the carrier 1 , a second semiconductor layer 22 of the second conductivity type facing the carrier 1 and an optically active layer arranged between the first and second semiconductor layers. twenty three. The semiconductor body 2 is based in particular on a compound III-V semiconductor material, for example based on gallium nitride. The first semiconductor layer 21 and the second semiconductor layer 22 are formed with N-type or P-type conductivity and can be N-type or P-type doped. Preferably, the first semiconductor layer 21 is formed with N-type conduct...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A device (100) is proposed having a carrier (1) and a semiconductor body (2) arranged on the carrier with an optically active layer (23), wherein the carrier has a metallic carrier layer (3), which is continuous form and mechanically stabilize the device. Furthermore, the carrier has a mirror layer ( 5 ), which is arranged between the semiconductor body and the carrier layer. The carrier also has a compensating layer ( 4 ), which directly adjoins the carrier layer and is designed to compensate for internal mechanical stresses of the component. Furthermore, a method is proposed which is suitable for producing a plurality of such devices.

Description

technical field [0001] A component is proposed, in particular an optoelectronic semiconductor chip with a reduced structural height. Furthermore, a method for producing a plurality of components is proposed. Background technique [0002] In components with a molded body as carrier, the potting compound is usually applied to the rear side of the component, wherein the contacts on the rear side are first covered and are only opened again by back grinding of the molded body. Furthermore, the solderable contact points on the rear side of the component can only be defined by additional processes. However, in the case of components without a molded body, in which the carrier of the component is in particular metallic, undesired deformations often occur during production of the component due to internal (thermo)mechanical stresses. Such undesired deformations can lead to curling of the semiconductor wafers, which impairs the processability of the semiconductor wafers and reduces ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/62H01L33/64H01L27/15
CPCH01L27/153H01L33/62H01L33/647H01L33/0093H01L33/405
Inventor 伊莎贝尔·奥托科比尼安·佩尔茨尔迈尔
Owner OSRAM OPTO SEMICON GMBH & CO OHG