Preparation method of perfect absorber, and perfect absorber

A technology of perfect absorption and metal layer, which is applied in the photographic process of pattern surface, optical mechanical equipment, instruments, etc., can solve the problem of limited range of refractive index variation, limitation of the development of all-optical tunable devices, and weak interaction between light and matter And other issues

Active Publication Date: 2019-05-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the range of refractive index variation obtained by the above method is extremely limited
Especially for all-optical modulation methods, the development of all-optical tunable devices is greatly limited due to the weak light-matter interaction in natural materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of perfect absorber, and perfect absorber
  • Preparation method of perfect absorber, and perfect absorber
  • Preparation method of perfect absorber, and perfect absorber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0049] The embodiment of the present invention provides a kind of preparation method of perfect absorber, such as figure 1 As shown, the method includes:

[0050] S11. Select silicon dioxide as the substrate, then ultrasonically clean the silicon dioxide substrate with deionized water, ethanol, and acetone, dry it with nitrogen, and then pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of a perfect absorber, and the perfect absorber. The method comprises the steps of selecting silicon dioxide as a substrate, and then preparing a first metal layer; preparing a dielectric layer on the first metal layer; covering the dielectric layer by a polymethyl methacrylate photoresist; and exposing the baked photoresist according to a preset periodic metasurface array structure, developing the exposed photoresist, and spraying a metal material on a top layer of the developed structure to form a second metal layer with the preset periodic metasurface array structure, so that the first metal layer, the dielectric layer and the second metal layer form the perfect absorber with a coherent cancellation effect. The parameters of the metasurface array structure can be reasonably optimized, so that adjacent structure units in the preset periodic metasurface array structure generate mode distribution with equal amplitudes and opposite phases, andfinally the coherent cancellation effect is obtained in a far field.

Description

technical field [0001] The invention relates to the technical field of optical perfect absorbers, in particular to a preparation method of a perfect absorber and the perfect absorber. Background technique [0002] Perfect absorbers have broad application prospects in fields such as bolometery, solar cells, optical sensing, and optical cloaking. The traditional method usually adopts the way of coating absorbing material to realize the perfect absorber. The emergence of metamaterials provides a new set of ideas for the development of electromagnetic materials. Metamaterials refer to the general term of artificial composite materials prepared through strict subwavelength structure design and processing according to actual needs. The development of metamaterials allows people to break through the limitations of some natural laws and obtain some extraordinary physical properties only through the structural design on the sub-wavelength fine scale of materials without changing th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00G03F7/00C23C14/35C23C14/30C23C14/18
Inventor 王然刘嵩岳嵩侯煜李曼张喆孙鸿雁张紫辰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap