Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof

A technology of absorbing wavelength and detecting device, applied in the field of terahertz wave detection, can solve the problems of limited electrostatic force, deformation of bridge legs, small area of ​​bridge legs, etc.

Active Publication Date: 2019-06-28
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After nearly 30 years of development, the uncooled microbolometer based on the vanadium oxide thermal resistance sensitive film has made great progress in the detection rate, which can reach 10 9 cm. Hz 1 / 2 / w, which is an order of magnitude higher than that of the deuterium L-alanine triglyceride sulfate (DLATGS) pyroelectric detector commonly used in the field of terahertz wave detection, but higher than that of the cooled detector (liquid helium cooled superconducting detector ) is at least an order of magnitude lower, the current uncooled microbolometers are limited to structures and materials that have not yet reached the background noise detection limit at room temperature, and there is still room for improvement
[0003] At present, pyroelectric detectors are used in most terahertz wave detection fields, and the detection wavelength range is relatively large. The use of high-power light sources can make up for the defect of a slightly lower detector rate, but for weak and slowly changing terahertz wave signals, Uncooled microbolometers have more advantages. Unfortunately, a single uncooled microbolometer absorbs terahertz waves in a narrow range, and its wavelength absorption range is determined by the distance between the suspended heat-sensitive film bridge surface and the bottom reflector. If you want to detect the terahertz wave band of interest, you need to change the spacing, and you must customize the detector
[0004] In order to realize wide-spectrum terahertz wave detection, the invention patent of US7968846B2 proposes an uncooled microbolometer with adjustable absorption wavelength, and the uncooled microbolometer with adjustable terahertz absorption wavelength The thermal radiometer uses the heat-sensitive film conductive bridge leg and the terahertz wave resonance to enhance the electrostatic attraction between the mirror, and adjusts the distance between the heat-sensitive film to absorb the bridge surface and the mirror through voltage, but due to the small area of ​​the bridge leg, The electrostatic force provided is limited. Under the condition of an external voltage of 100V, the spacing change does not exceed 2μm, and the absorption center wavelength range does not exceed 8μm, which is far from covering the entire terahertz wave band (0.1~10THz)
In addition, the original design and process are still used, especially when making the resonator, the polyimide sacrificial layer structure is continued. Since this layer cannot withstand high temperatures above 300 ° C, the upper film, including silicon nitride and vanadium oxide High-temperature coating process cannot be used for thin films, which does not help to thin the silicon nitride support layer (reduce thermal response time) and reduce defects in the vanadium oxide thermal resistance sensitive layer (reduce 1 / f low-frequency noise)
Furthermore, the distance between the bridge deck and the reflector is absorbed by the heat-sensitive film through voltage adjustment, which will cause deformation of the bridge legs, causing fluctuations in the overall bridge deck impedance, and generating current noise

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof
  • Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof
  • Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments of single-point detectors. It should be understood that the specific embodiments described here are only used to explain the present invention, and the structures and manufacturing methods thereof are also applicable to the linear array detector, and are not intended to limit the present invention.

[0030] Figure 1A to Figure 1H It shows the process steps of the preparation method of the terahertz wave detection device with adjustable absorption wavelength in this embodiment;

[0031] Step 1, such as Figure 1A As shown, a substrate 31 is provided, and a supporting layer 32 is formed on the substrate 31 .

[0032] Specifically, an ultra-flat double-sided polished single crystal silicon wafer is selected as the substrate 31, and the thickness unif...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a terahertz wave detection device with an adjustable absorption wavelength and a preparation method thereof, and the preparation method comprises the steps: providing a substrate, and manufacturing and forming a supporting layer on the substrate; manufacturing and forming a thermosensitive layer on the supporting layer; manufacturing and forming a conductive layer on the supporting layer and the thermosensitive layer; manufacturing and forming an absorption layer on the thermosensitive layer; forming a light through hole in the surface, back on to the absorption layer,of the substrate; providing a base and a movable reflector, and mounting the movable reflector on the base; and fixedly connecting the base with the substrate, so that the absorption layer is alignedwith the reflecting surface of the movable reflector in parallel. The preparation method disclosed by the invention has the advantages that the process is simple, the detector and the movable reflector for tuning the wavelength are separated, and the detection range of the detection device can cover the whole terahertz wave band; meanwhile, the novel thin film process is beneficial to improving the detection rate and reducing the thermal response time constant.

Description

technical field [0001] The invention relates to the field of terahertz wave detection, in particular to a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof. Background technique [0002] The uncooled microbolometer originated in the late 1980s. This type of detector was originally designed for detection in the 8-14 μm far-infrared band. According to its thermal radiation detection mechanism, it can theoretically detect near-infrared to millimeter waves. Range of thermal radiation light. After nearly 30 years of development, the uncooled microbolometer based on the vanadium oxide thermal resistance sensitive film has made great progress in the detection rate, which can reach 10 9 cm. Hz 1 / 2 / w, which is an order of magnitude higher than that of the deuterium L-alanine triglyceride sulfate (DLATGS) pyroelectric detector commonly used in the field of terahertz wave detection, but higher than that of the cooled detector (li...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): G01N21/3581G02B26/08
Inventor魏广路鲁远甫
OwnerSHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI