Silicon core structure for polycrystalline silicon production
A polysilicon and silicon core technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of inversion, limited structural strength, production accidents, etc., and achieve the effect of reducing the inversion rate.
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[0013] In order to better understand the technical solutions described in the present invention, further details are now given in conjunction with the accompanying drawings.
[0014] See figure 1 The silicon core structure for polysilicon production according to Embodiment 1 of the present invention includes a first silicon core 101 , a second silicon core 102 , a beam 103 and a graphite connector 104 . Wherein, the first silicon core 101 and the second silicon core 102 are arranged in parallel and at intervals, and the beam 103 is erected on top of the first silicon core 101 and the second silicon core 102 . The graphite connectors 104 are L-shaped, and there are two in this embodiment. Each graphite connector 104 includes a silicon core overlapping portion 1041 and a beam overlapping portion 1043 perpendicular to the silicon core overlapping portion 1041 . Wherein, a silicon core overlapping hole 1042 is opened in the silicon core overlapping portion 1041 , and a beam over...
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