Polysilicon production process

Abstract

A polysilicon production process, comprising the following steps: a preliminary growth step of silicon rods: introducing hydrogen and dichlorodihydrosilicon into a reduction furnace to generate polysilicon on the surface of the silicon core to grow the silicon rods to a predetermined size; the complete growth step of the silicon rods: The mixed gas of trichlorosilane, dichlorodihydrosilane and hydrogen is introduced to complete the growth of the silicon rods; the step of opening the furnace: after the growth of the silicon rods is completed, the reduction furnace is opened, and the silicon rods are taken out. The polysilicon production process of the present invention adopts a two-stage growth method, starting with the reaction method of dichlorodihydrogen silicon and hydrogen gas, which has a faster growth rate than the conventional method of hydrogen reduction of trichlorosilicon. In the early stage of rod growth, the possibility of rod collapse is reduced. The polysilicon production process of the present invention can reduce the rod collapse rate and reduce production costs. In the complete growth stage of silicon rods, adding some dichlorodihydrosilane can effectively increase the silicon production rate and improve the conversion efficiency of raw materials by 10% to 15%.

Description

technical field [0001] The invention relates to a polysilicon production process, in particular to a polysilicon production process which uses a reduction process to produce polysilicon. Background technique [0002] In the existing production of polysilicon, polysilicon is generally obtained by reducing trichlorosilane in a reduction furnace. In the reduction furnace, trichlorosilane and hydrogen are introduced to grow crystals on silicon cores at high temperatures to form silicon rods. This is the most widely used method at present. One of the most widely used polysilicon production methods. However, the energy consumption of this production method is relatively high, and in the process of growing silicon rods, the phenomenon of "inverted rods" will occur, making it impossible to obtain complete polycrystalline silicon rods. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a polysilicon production process with ...

AI Technical Summary

Problems solved by technology

However, the energy consumption of this production method is relatively high, and during the growth process of silicon rods, the phenomenon of "inverted rods" will occur, and it is impossible to obtain complete polycrystalline silicon rods.

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