Polysilicon manufacturing technique
A production process, polysilicon technology, applied in the direction of silicon, etc., can solve the problems of inability to obtain polysilicon rods, high energy consumption, and rod collapse, and achieve the effects of reducing the possibility of rod collapse, fast growth, and reducing the rod collapse rate
Active Publication Date: 2017-08-29
巴彦淖尔聚光硅业有限公司
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However, the energy consumption of this production method is relatively high, and during the growth process of silicon rods, the phenomenon of "inverted rods" will occur, and it is impossible to obtain complete polycrystalline silicon rods.
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[0011] Combine below figure 1 and figure 2 The polysilicon production process of the present invention will be described in detail.
[0012] Polysilicon production technique of the present invention comprises the following steps:
[0013] Silicon rod initial growth step. Pass hydrogen and dichlorodihydrogen silicon into the reduction furnace, hydrogen is used as a carrier, and dichlorodihydrogen silicon reacts to deposit polysilicon on the surface of the silicon core. The reaction equation is as follows:
[0014] 2SIH2CL2=SI+SICL4+2H2;
[0015] SIH2CL2=SI+2HCL;
[0016] The silicon rods continue to grow thicker until they reach a predetermined size. In this embodiment, the predetermined size of the silicon core is 10 mm, and the predetermined size of the silicon rod is 40 mm. At this stage, the temperature is controlled at about 600-900°C, and the pressure is from normal pressure to 1.0 MPa.
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Abstract
Polysilicon manufacturing technique includes the following steps: a step of silicon rod preliminary growth, which includes leading hydrogen and dichlorosilane to a reducing furnace and growing polysilicon on the surface of a silicon core to make the silicon rod grow to a predetermined dimension; a step of silicon rod complete growth, which includes leading a gas mixture of trichlorosilane, dichlorosilane and hydrogen in to complete silicon rod growth; and a step of furnace opening, which includes opening the reducing furnace and taking the silicon rod out. According to the polysilicon manufacturing technique, two-step growth is adopted. At the beginning, a manner that dichlorosilane and hydrogen are adopted for a reaction provides a faster speed than a conventional manner of reducing trichlorosilane with hydrogen. Usually, the accident of rod reduction takes place at the earlier stage of silicon rod growth, and the technique reduces the possibility of rod reduction. According to the technique, the rod reduction rate is reduced, so that the production cost is reduced. In the step of silicon rod complete growth, a part of dichlorosilane is added to effectively raise the silicon production rate, and the conversion efficiency of the raw materials can be raised by 10-15%.
Description
technical field [0001] The invention relates to a polysilicon production process, in particular to a polysilicon production process which uses a reduction process to produce polysilicon. Background technique [0002] In the existing production of polysilicon, polysilicon is generally obtained by reducing trichlorosilane in a reduction furnace. In the reduction furnace, trichlorosilane and hydrogen are introduced to grow crystals on silicon cores at high temperatures to form silicon rods. This is the most widely used method at present. One of the most widely used polysilicon production methods. However, the energy consumption of this production method is relatively high, and in the process of growing silicon rods, the phenomenon of "inverted rods" will occur, making it impossible to obtain complete polycrystalline silicon rods. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a polysilicon production process with ...
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IPC IPC(8): C01B33/03
CPCC01B33/03C01P2006/90
Inventor 齐林喜郭金强
Owner 巴彦淖尔聚光硅业有限公司