Silicon wafer processing device and method

A technology for processing devices and silicon wafers, which is applied in the direction of exposure devices, optics, instruments, etc. in the photolithography process, and can solve the problems of inability to achieve full coverage exposure of silicon wafers and expensive equipment.

Active Publication Date: 2019-07-30
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a silicon wafer processing device and method to solve the problems that the existing equipment cannot realize the full coverage exposure of silicon wafers and the equipment is expensive, and at the same time realize the pre-alignment treatment of 8-inch or 12-inch silicon wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon wafer processing device and method
  • Silicon wafer processing device and method
  • Silicon wafer processing device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0050] As mentioned in the background art, the requirements for pre-alignment and edge exposure in the market are getting higher and higher, and the degree of automation is getting higher and higher. For the pre-alignment function, it is not only required to be able to complete the pre-alignment of various types of process wafers, but also to realize the processing of 8-inch and 12-inch silicon wafers at the same time. For the edge exposure function, it is not only required to realize edge exposure, multiple exp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a silicon wafer processing device and method. The silicon wafer processing device comprises the following parts of a silicon wafer carrier for adsorbing and fixing, and moving or rotating the silicon wafer; a silicon wafer adsorption and transfer mechanism for realizing precise transfer of the silicon wafer; a pre-alignment lens set cooperating with the silicon wafer carrierto realize centering and orientation of the silicon wafer; an edge exposure lens group cooperating with the silicon wafer carrier to realize exposure of different positions of the silicon wafer; a diaphragm and a diaphragm switching axis for adjusting the size of the exposure field of view according to the edge exposure. Accurate transfer of the silicon wafer during the centering orientation of the silicon wafer is realized by the silicon wafer adsorption and transfer mechanism, and full coverage exposure of the silicon wafer is realized through the silicon wafer carrier, the edge exposure lens group and the diaphragm switching axis.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a silicon wafer processing device and method. Background technique [0002] Electroplating is one of the most important processes for the post-packaging of integrated circuits. Before the electroplating process, the photoresist on the edge of the silicon wafer needs to be removed. There are many traditional silicon wafer edge removal methods, but in general there are two categories: chemical edge removal method and edge exposure method. The edge exposure method is to vacuum absorb the silicon wafer on the rotating platform, fix a set of ultraviolet exposure lenses above the edge of the silicon wafer to produce a uniform illumination spot of a certain size, and then use the rotation of the rotating table to realize the edge exposure of the silicon wafer. Compared with the chemical edge removal method, the edge exposure method has the advantages of high production effici...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F7/20
CPCG03F7/70716G03F7/70775
Inventor 王刚黄栋梁
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products