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Photoelectric detector and method for fabricating same

A photodetector and photoelectric detection technology, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problem of serious optical crosstalk

Active Publication Date: 2019-10-08
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a photodetector and a preparation method to solve the technical problem that the optical crosstalk between the photodetection units of the photodetector is relatively serious in the prior art

Method used

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  • Photoelectric detector and method for fabricating same
  • Photoelectric detector and method for fabricating same
  • Photoelectric detector and method for fabricating same

Examples

Experimental program
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Embodiment 1

[0042] figure 1 For a structural schematic diagram of a photodetector provided in an embodiment of the present invention, see figure 1 , the photodetector includes: a substrate 1; a thin film transistor array 2 formed on the substrate 1; at least one pixel electrode 3 formed on the thin film transistor array 2; a pixel definition layer 4 formed on the pixel electrode 3, the pixel At least one opening 41 is formed on the definition layer 4, exposing the pixel electrode 3. The dimension L1 of the pixel definition layer 4 in the direction perpendicular to the plane of the substrate 1 is larger than the exposed part of the pixel electrode 3 in the direction parallel to the plane of the substrate 1. Dimension L2; the photodetection device layer 5 formed on the pixel definition layer 4, located in the opening 41; the top electrode 6 formed on the photodetection device layer 5.

[0043] In this embodiment, the substrate 1 may be a plastic substrate or a hard glass substrate.

[004...

Embodiment 2

[0067] On the basis of the above examples, with figure 1 The schematic structural diagram of the photodetector is shown as an example for illustration, the embodiment of the present invention provides a method for preparing a photodetector, see image 3 , including the following steps:

[0068] Step 110, providing a substrate.

[0069] see figure 1 , providing a substrate 1 .

[0070] Step 120, forming a thin film transistor array on the substrate.

[0071] see figure 1 , forming a thin film transistor array 2 on a substrate 1 .

[0072] Step 130, forming at least one pixel electrode on the thin film transistor array.

[0073] see figure 1 , at least one pixel electrode 3 is formed on the thin film transistor array 2, and the pixel electrode 3 is arranged correspondingly to the thin film transistor.

[0074] Step 140, forming a pixel definition layer on the pixel electrode, at least one opening is formed on the pixel definition layer to expose the pixel electrode, and ...

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Abstract

The embodiment of the present invention discloses a photoelectric detector and a method for fabricating the same. The photoelectric detector comprises a substrate; a thin film transistor array formedon the substrate; at least one pixel electrode formed on the thin film transistor array; a pixel defining layer formed on the pixel electrode, provided with at least one opening exposing the pixel electrode, having a size in a direction perpendicular to a plane where the substrate is located larger than a size of the exposed portion of the pixel electrode in a direction in parallel with a plane where the substrate is located; a photoelectric detection device layer formed on the pixel defining layer and located in the opening; and a top electrode formed on the photoelectric detection device layer. In the technical solution of the embodiment of the present invention, the photoelectric detection device layer is formed in the opening of the pixel defining layer by disposing the opening havinga deep well structure and having a height-to-depth ratio greater than 1 in the pixel defining layer, so that the incident light irradiating between photoelectric detection units does not have an optical crosstalk problem.

Description

technical field [0001] Embodiments of the present invention relate to the field of optoelectronic technology, in particular to a photodetector and a preparation method. Background technique [0002] Photoelectric detection technology uses photoelectric conversion devices to convert the electromagnetic wave signal with detection into a detectable current or voltage signal, and after the signal is read, amplified and processed, the image information of the target to be detected is obtained. Photoelectric detection technology is widely used in medical, military, engineering and other aspects. [0003] The photodetector includes a plurality of photodetection units, and each photodetection unit includes an active layer that converts the electromagnetic wave signal into a detectable current or voltage signal. The optical crosstalk between the current photodetector photodetection units is relatively serious . Contents of the invention [0004] In view of this, the embodiments o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/30
CPCH10K39/32
Inventor 张伟李民徐苗庞佳威陈子楷张艳丽
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH