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Photodetector and method of making the same

A photodetector, photoelectric detection technology, applied in the direction of electrical solid devices, circuits, electrical components, etc., can solve problems such as serious optical crosstalk

Active Publication Date: 2019-12-13
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a photodetector and a preparation method to solve the technical problem that the optical crosstalk between the photodetection units of the photodetector is relatively serious in the prior art

Method used

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  • Photodetector and method of making the same
  • Photodetector and method of making the same

Examples

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Embodiment 1

[0042] figure 1 For a structural schematic diagram of a photodetector provided in an embodiment of the present invention, see figure 1 , the photodetector includes: a substrate 1; a thin film transistor array 2 formed on the substrate 1; at least one pixel electrode 3 formed on the thin film transistor array 2; a pixel definition layer 4 formed on the pixel electrode 3, the pixel At least one opening 41 is formed in the definition layer 4, exposing the pixel electrode 3, and the dimension L1 of the pixel definition layer 4 in the direction perpendicular to the plane of the substrate 1 is larger than the exposed part of the pixel electrode 3 in the direction parallel to the plane of the substrate 1 Dimension L2; the photodetection device layer 5 formed in the pixel definition layer 4, located in the opening 41; the top electrode 6 formed on the photodetection device layer 5.

[0043] In this embodiment, the substrate 1 may be a plastic substrate or a hard glass substrate.

[...

Embodiment 2

[0067] On the basis of the above examples, with figure 1 The schematic structural diagram of the photodetector is shown as an example for illustration, the embodiment of the present invention provides a method for preparing a photodetector, see image 3 , including the following steps:

[0068] Step 110, providing a substrate.

[0069] see figure 1 , providing a substrate 1 .

[0070] Step 120, forming a thin film transistor array on the substrate.

[0071] see figure 1 , forming a thin film transistor array 2 on a substrate 1 .

[0072] Step 130, forming at least one pixel electrode on the thin film transistor array.

[0073] see figure 1 , at least one pixel electrode 3 is formed on the thin film transistor array 2, and the pixel electrode 3 is arranged correspondingly to the thin film transistor.

[0074] Step 140, forming a pixel definition layer on the pixel electrode. At least one opening is formed in the pixel definition layer to expose the pixel electrode. The ...

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Abstract

The embodiment of the present invention discloses a photodetector and its preparation method, including: a substrate; a thin film transistor array formed on the substrate; at least one pixel electrode formed on the thin film transistor array; a pixel definition formed on the pixel electrode layer, at least one opening is formed in the pixel definition layer to expose the pixel electrode, and the size of the pixel definition layer in the direction perpendicular to the plane of the substrate is larger than the size of the exposed part of the pixel electrode in the direction parallel to the plane of the substrate; forming A photodetection device layer in the pixel definition layer, located in the opening; a top electrode formed on the photodetection device layer. In the technical solution of the embodiment of the present invention, the photodetection device layer is formed in the opening of the pixel definition layer by setting the opening of the "deep well structure" whose height-to-depth ratio is greater than 1 in the pixel definition layer, so that the radiation between the photodetection units The incident light does not cause optical crosstalk problems.

Description

technical field [0001] Embodiments of the present invention relate to the field of optoelectronic technology, in particular to a photodetector and a preparation method. Background technique [0002] Photoelectric detection technology uses photoelectric conversion devices to convert the electromagnetic wave signal with detection into a detectable current or voltage signal, and after the signal is read, amplified and processed, the image information of the target to be detected is obtained. Photoelectric detection technology is widely used in medical, military, engineering and other aspects. [0003] The photodetector includes a plurality of photodetection units, and each photodetection unit includes an active layer that converts the electromagnetic wave signal into a detectable current or voltage signal. The optical crosstalk between the current photodetector photodetection units is relatively serious . Contents of the invention [0004] In view of this, the embodiments o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/30
CPCH10K39/32
Inventor 张伟李民徐苗庞佳威陈子楷张艳丽
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH