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Triode three-terminal current waveform measuring system and method, triode annealing effect measuring system and method, and neutron fluence measuring method

A technology of waveform measurement and current measurement circuit, which is applied in the direction of measuring electrical variables, measuring electricity, measuring devices, etc., and can solve problems such as the failure of the triode to respond

Active Publication Date: 2019-10-25
NORTHWEST INST OF NUCLEAR TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the scan time is too short, the transistor cannot respond
Therefore, the scanning method is not suitable for the measurement of the three-terminal current of the triode under the pulsed neutron environment, so a new measurement system needs to be established to accurately measure the three-terminal current and / or annealing effect of the triode under the pulsed neutron irradiation

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  • Triode three-terminal current waveform measuring system and method, triode annealing effect measuring system and method, and neutron fluence measuring method
  • Triode three-terminal current waveform measuring system and method, triode annealing effect measuring system and method, and neutron fluence measuring method
  • Triode three-terminal current waveform measuring system and method, triode annealing effect measuring system and method, and neutron fluence measuring method

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Embodiment Construction

[0073] The present invention will be further described below in conjunction with accompanying drawing:

[0074] figure 2 It is a functional block diagram of a preferred example of the triode annealing effect measurement system of the present invention. The entire triode annealing effect measurement system includes a triode current measurement circuit and a trigger circuit, wherein a data acquisition card, a low-voltage power supply, a test board, and an irradiation board constitute a triode current measurement circuit. Diamond neutron detector (in other embodiments, also can adopt inorganic scintillator detector), high-voltage power supply, oscilloscope constitute trigger loop; Radiation plate and diamond neutron detector are placed in the irradiation room, data acquisition card, The low-voltage power supply, test board, high-voltage power supply and oscilloscope are placed in the test room, and the test board and the irradiation board, between the oscilloscope and the diamon...

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Abstract

In order to accurately measure three-terminal currents of a triode, a triode annealing effect and the neutron fluence under the pulse neutron irradiation, the invention provides a triode three-terminal current waveform measuring system and method, a triode annealing effect measuring system and method, and a neutron fluence measuring method. According to the invention, under the circumstance that the current of an emitter of a to-be-measured triode is fixed, the response to the pulse neutron by the three-terminal currents of the to-be-measured triode is measured and the bias of the triode is not affected by the photocurrent during the irradiation, so that accurate measurement of the triode annealing effect under the pulsed neutron irradiation and the neutron fluence in an unknown irradiation field.

Description

technical field [0001] The invention relates to a triode annealing effect measurement system under the condition of pulsed neutron radiation, in particular to a triode three-terminal current waveform, annealing effect measurement system and method, and a neutron fluence measurement method under the condition of a fixed emitter current. Background technique [0002] Under pulsed neutron irradiation, a large number of displacement loss defects (clusters): vacancies and interstitial atom pairs are generated in semiconductors. Initially formed simple defects (clusters) will form complex defects (clusters) by recombining with themselves, impurity atoms, dopant atoms and other particles. This defect evolution process plays an important role in the study of semiconductor neutron radiation effects. The basic position of the defect, and the measurement of the annealing effect of the triode under the condition of pulsed neutron irradiation is an excellent means to study the evolution ...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01T3/08
CPCG01R31/2601G01T3/08
Inventor 白小燕刘岩陈伟齐超金晓明王桂珍
Owner NORTHWEST INST OF NUCLEAR TECH
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