Display device and method of manufacturing display device
A display device and display panel technology, applied in static indicators, optics, instruments, etc., can solve problems such as poor wire breakage, wire breakage, and reduced pass rate, and achieve the effect of improving pass rate
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Embodiment approach 1
[0075] Figure 5 It is a plan view showing an example of the structure of the first transparent substrate 21 according to the first embodiment of the present invention.
[0076] Such as Figure 5 As shown, the connection wiring 63 is formed to extend from each drive IC output terminal 57 to the outside of the first transparent substrate 21. The short-circuit ring 64 is formed outside the first transparent substrate 21. In the first embodiment, the feature is that each drive IC output terminal 57 is connected to the short-circuit ring 64 via the connection wiring 63. Since the other structure is the same as the premise technology, detailed description is omitted here.
[0077] Figure 5 The manufacturing process of the display device 1 is shown, specifically, the manufacturing process of the parallax barrier louver panel 20 is shown. In the manufacturing process of the parallax barrier louver panel 20, the first transparent substrate 21 is for example Image 6 The TFT array substr...
Embodiment approach 2
[0085] Picture 10 It is a plan view showing an example of the structure of the first transparent substrate 21 according to the second embodiment of the present invention.
[0086] Such as Picture 10 As shown, the short-circuit ring 64 is formed in the first transparent substrate 21. The second embodiment is characterized in that a high resistance element 65 is provided between each drive IC output terminal 57 and the short-circuit ring 64. That is, each drive IC output terminal 57 is connected to the short-circuit ring 64 via the connection wiring 63 and the high resistance element 65. Since the other structure is the same as the premise technology, detailed description is omitted here.
[0087] The high-resistance element 65 can be formed of, for example, a fine pattern of a high-resistance material such as amorphous silicon or ITO.
[0088] Based on the above description, according to the second embodiment, a high-resistance element 65 is provided between each drive IC output t...
Embodiment approach 3
[0092] Picture 11 It is a plan view showing an example of the structure of the first transparent substrate 21 according to Embodiment 3 of the present invention.
[0093] Such as Picture 11 As shown, the short-circuit ring 64 is formed in the first transparent substrate 21. The third embodiment is characterized in that a spark gap 66 is provided between each drive IC output terminal 57 and the short-circuit ring 64. That is, each drive IC output terminal 57 is connected to the short-circuit ring 64 via the connection wiring 63 and the spark gap 66. Since the other structure is the same as the premise technology, detailed description is omitted here.
[0094] Such as Picture 12 As shown, the spark gap 66 is a gap provided between the connecting wire 63 and the short-circuit ring 64.
[0095] Based on the above description, according to the third embodiment, a spark gap 66 is provided between each drive IC output terminal 57 and the short-circuit ring 64. Therefore, even if stati...
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