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Three-dimensional memory device and manufacturing method thereof

A storage device and memory technology, which can be used in the field near the lower limit and can solve problems such as high cost

Active Publication Date: 2021-05-25
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly
As a result, the storage density of planar memory cells approaches the upper limit

Method used

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  • Three-dimensional memory device and manufacturing method thereof
  • Three-dimensional memory device and manufacturing method thereof
  • Three-dimensional memory device and manufacturing method thereof

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Embodiment Construction

[0023] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure can also be used in various other applications.

[0024] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, But each embodiment may not necessarily include that particular feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in conjunction wit...

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Abstract

An embodiment of a method of forming a three-dimensional (3D) memory device includes the following operations. First, initial channel holes are formed in a stack structure of a plurality of first layers and a plurality of second layers alternately arranged above a substrate. An offset is formed between a side surface of each of the plurality of first layers and a side surface of each of the plurality of second layers on a sidewall of the initial channel hole to form the channel hole. A semiconductor channel is formed by filling a channel hole with a channel-forming structure, the semiconductor channel having a memory layer including a plurality of first memory portions each surrounding a bottom of a corresponding second layer and each connecting adjacent A plurality of second memory portions of the first memory portion.

Description

[0001] Cross references to related patent applications [0002] This application claims the priority of Chinese Patent Application Nos. 201910248967.4, 201910248617.8, 201910248601.7, 201910248966.X and 201910248585.1 all filed on March 29, 2019, the contents of which are hereby incorporated by reference in their entirety. Background technique [0003] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods of manufacturing the same. [0004] Planar memory cells are scaled to smaller sizes by improving process technology, circuit design, programming algorithms, and manufacturing processes. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly. As a result, the storage density of planar memory cells approaches the upper limit. [0005] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture inc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11578H01L27/11582H01L27/11568H10B43/20H10B43/27H10B43/30
CPCH10B43/20H10B43/30H10B43/27H10B41/27H01L21/31116H01L21/02636H01L21/02164H01L21/7682H01L21/30604H01L21/0214H01L29/40117
Inventor 肖莉红
Owner YANGTZE MEMORY TECH CO LTD