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Temperature compensation layer structure, bulk acoustic wave resonator, manufacturing methods, filter and electronic equipment

A bulk acoustic wave resonator, layer structure technology, applied in electrical components, impedance networks, etc., can solve the problems of temperature compensation layer damage, poor temperature compensation layer process compatibility, etc.

Pending Publication Date: 2020-05-01
ROFS MICROSYST TIANJIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the manufacturing process, the process compatibility of the temperature compensation layer is not good, and the post-production process of FBAR is easy to cause damage to the temperature compensation layer

Method used

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  • Temperature compensation layer structure, bulk acoustic wave resonator, manufacturing methods, filter and electronic equipment
  • Temperature compensation layer structure, bulk acoustic wave resonator, manufacturing methods, filter and electronic equipment
  • Temperature compensation layer structure, bulk acoustic wave resonator, manufacturing methods, filter and electronic equipment

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Embodiment Construction

[0038] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0039] figure 1 It is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, in which a structure of a temperature compensation layer is shown. figure 1 The reference signs in each are as follows:

[0040] 10: The first seed layer, aluminum nitride, zinc oxide, PZT and other materials can be selected and contain a certain atomic ratio of rare earth element doped mater...

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Abstract

The invention relates to a temperature compensation layer structure which comprises: a temperature compensation layer, wherein the upper side of the end of the temperature compensation layer is a slope so that the end of the temperature compensation layer can be a wedge-shaped end face, and the angle formed between the upper side of the end of the temperature compensation layer and the bottom sideof the temperature compensation layer is smaller than 60 degrees; and an upper seed layer covering the temperature compensation layer, wherein at least one end of the upper seed layer is provided with an extension part extending to the outer side of the temperature compensation layer. The invention further relates to a bulk acoustic wave resonator, a manufacturing method of the temperature compensation layer structure, a manufacturing method of the bulk acoustic wave resonator, a filter and electronic equipment.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a temperature compensation layer structure and a manufacturing method thereof, a bulk acoustic wave resonator, a filter, and a sub-device. Background technique [0002] At present, bulk acoustic wave resonators generally have negative frequency temperature drift coefficients, and their frequency temperature drift coefficients are about -30PPM / K. The reason is that the piezoelectric materials and electrode materials of bulk acoustic wave resonators have negative frequency temperature drift coefficients, which means that these The stiffness of the material will decrease with the increase of temperature, and the decrease of stiffness will reduce the speed of sound. Combining V=F*λ=F*2d (where V is the speed of sound, F is the frequency, λ is the wavelength, and d is the thickness of the piezoelectric layer), so the frequency will decrease; but when the tempera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H3/04
CPCH03H9/02102H03H3/04H03H2003/0407H03H9/131H03H9/132H03H9/173
Inventor 庞慰闫德海张孟伦
Owner ROFS MICROSYST TIANJIN CO LTD