All-thin-film silicon semiconductor double-electrode bias-voltage-free photoelectrocatalysis full-water-decomposition hydrogen production system and application thereof

A photoelectric catalysis and thin-film silicon technology, which is applied in the direction of electrodes, electrolytic processes, electrolytic components, etc., to achieve the effect of slowing down the speed of corrosion

Active Publication Date: 2020-05-22
GUILIN UNIV OF ELECTRONIC TECH
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  • Claims
  • Application Information

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Problems solved by technology

However, since the generated open-circuit voltage is not enough to offset the energy limitation of 1.23V and ov

Method used

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  • All-thin-film silicon semiconductor double-electrode bias-voltage-free photoelectrocatalysis full-water-decomposition hydrogen production system and application thereof
  • All-thin-film silicon semiconductor double-electrode bias-voltage-free photoelectrocatalysis full-water-decomposition hydrogen production system and application thereof
  • All-thin-film silicon semiconductor double-electrode bias-voltage-free photoelectrocatalysis full-water-decomposition hydrogen production system and application thereof

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Embodiment 1

[0026] Such as figure 1 A full-thin-film silicon semiconductor double-electrode unbiased photocatalytic hydrogen production system is shown, which includes Co 3 o 4 / nip photoanode, Pt / pin photocathode, electrolyte, light source 6, electrolytic cell 7, the structure of the photoanode is FTO substrate layer 1, single-section silicon film 2 of n / i / p structure, Co 3 o 4 Oxide film 3, the structure of the photocathode is FTO substrate layer 1, single-section silicon film 5 with p / i / n structure, hydrogen-producing metal Pt nanoparticle film 4, and the electrolyte is 1M KOH solution ; said Co 3 o 4 The preparation method of / nip photoanode is as follows: FTO (transparent conductive glass) substrate 1 is washed with acetone, ethanol, and water for 30 minutes each, then dried, and placed in a very high frequency plasma vapor deposition equipment (PEVCVD) to deposit and deposit n-type sequentially. Silicon thin film, intrinsic silicon thin film and p-type silicon thin film, obtain...

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Abstract

The invention discloses an all-thin-film silicon semiconductor double-electrode bias-free photoelectrocatalysis full-water-decomposition hydrogen production system and application thereof. The systemcomprises a photoanode, a photocathode, an electrolyte, a light source and an electrolytic tank, wherein the structure of the photoanode sequentially comprises a substrate layer, a single-section silicon thin film with an n/i/p structure and an oxide thin film; the structure of the photocathode sequentially comprises a substrate layer, a single-section silicon film having a p/i/n structure and hydrogen production metal nanoparticles. The system is the first all-thin-film silicon semiconductor two-electrode system formed by combining a silicon film electrode with a catalyst, the bias-free fullwater decomposition efficiency is 0.92%, and hope and a strategy are provided for realizing large-scale sustainable solar hydrogen production.

Description

Technical field: [0001] The invention relates to a full-thin-film silicon semiconductor double-electrode non-biased photocatalytic system for fully decomposing water to produce hydrogen and its application. Background technique: [0002] Photoelectrochemical splitting of water to produce hydrogen can directly convert and store solar energy into chemical energy, which is one of the key technologies for utilizing clean energy. Semiconductor materials are the main body of solar photoelectric conversion, and good charge transfer between interfaces and stable co-catalysts are necessary conditions for efficient conversion of solar energy into hydrogen. Common properties of semiconductor photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. For a photoelectrochemical device, three factors should be considered: one is the ability of the catalyst for hydrogen evolution (HER) or oxygen evolution reaction (OER) to utilize electro...

Claims

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Application Information

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IPC IPC(8): C25B11/06C25B11/08C25B1/04C23C16/50C23C16/24C23C14/35C23C14/16C23C14/08B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C23C14/085C23C14/165C23C14/35C23C16/24C23C16/50C25B1/04C25B1/55C25B11/091C25B11/093Y02E60/36
Inventor 张坚张豆豆
Owner GUILIN UNIV OF ELECTRONIC TECH
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