Mosaic target experiment design method with controllable film composition

A technology for experimental design and inlaying of targets, which is applied in metal material coating process, mechanical counter/curvature measurement, vacuum evaporation plating, etc. The effect of large-scale promotion and application

Active Publication Date: 2022-01-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the fact that it is difficult to control the composition of the multi-element doped film by magnetron sputtering, it is necessary to minimize the calculation error of the film content, aiming at the problems existing in the existing magnetron sputtering alloy target, the present invention provides a controllable film Mosaic target experimental design method of composition, after verification, the Er prepared by this method 0.07 sc 0.04 Al 0.89 The N thin film has good c-axis orientation, and the surface roughness is small, which can meet the preparation requirements of the device, and the error between the theoretical calculation value and the experimental value of the doping content of the film is small

Method used

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  • Mosaic target experiment design method with controllable film composition
  • Mosaic target experiment design method with controllable film composition
  • Mosaic target experiment design method with controllable film composition

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Embodiment 1

[0045] A mosaic target experimental design method that can control the composition of the film. According to the magnetic field simulation, the magnetic field distribution at different positions on the target surface is obtained, so as to arrange the positions of the mosaic holes on the target, so as to prepare a uniform c-axis oriented AlN film. And theoretically calculate the content of the doped film;

[0046] The design method includes the following steps:

[0047] (1) Calculate the magnetic field distribution at different positions on the target surface according to the magnetic field simulation;

[0048] (2) Use the waste target material to measure the etching runway formed by the concave part of the target surface due to magnetron sputtering, and record the variation curve of the height of the concave position along the radial direction;

[0049] (3) Compare the magnetic field distribution diagram and the etching track on the target surface, arrange the position of the...

Embodiment 2

[0051] A mosaic target experimental design method capable of controlling film composition, comprising the following steps:

[0052] (1) Calculate the magnetic field distribution at different positions on the target surface according to the magnetic field simulation;

[0053] (1.1): Draw a simple model diagram of the magnetron sputtering vacuum chamber and the internal magnet;

[0054] (1.2): Import the model file obtained in step 1 into COMSOL software, set the material, boundary conditions, physical field and divide the grid, and finally calculate the magnetic field distribution on the target, and obtain the magnetic field distribution map at different positions on the target surface.

[0055] (2) Use the waste target material to measure the etching runway formed by the concave part of the target surface due to magnetron sputtering, and record the variation curve of the height of the concave position along the radial direction;

[0056] (2.1): Using waste target material 3, ...

Embodiment 3

[0065] The difference between this embodiment and Embodiment 2 is that in step (3.2), the center line of the deepest position of the etched track is taken as the center, and the radius of the metal ingot is used as the radius, and a ring of mosaic holes is arranged along the center line, and the Sc ingot is placed. Combined with the sputter yield map, the deposited film composition is calculated.

[0066] Figure 6 is from the center of the target circle O 0 Schematic diagram of the fan shape formed by the two outer tangent lines of the single-ring mosaic hole drawn from . f(ρ) is the function of the sputtering efficiency to the pole diameter ρ, which describes the distribution of the sputtering efficiency in the radial direction. It is known that the sputtering efficiency is directly proportional to the strength of the magnetic field. Area IV is the position of the mosaic hole, and the center of the circle is O 1 , the areas I, II, and III are the remaining areas after su...

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Abstract

The invention provides an experimental design method for a mosaic target that can control the composition of the film. According to the magnetic field simulation, the magnetic field distribution at different positions on the target surface is obtained, so as to arrange the positions of the mosaic holes on the target, thereby preparing uniform c-axis orientation. AlN film, and theoretically calculate the content of the doped film; including the following steps: (1) calculate the magnetic field distribution at different positions on the target surface according to the magnetic field simulation; (2) use the waste target to measure the surface of the target due to magnetron sputtering The etching runway formed by the recessed part records the change curve of the height of the recess position along the radial direction; (3) compares the magnetic field distribution map with the etching track on the target surface, arranges the position of the mosaic hole, and obtains the Sc, The theoretical content of Er and Al atoms. The invention uses a mosaic target to achieve doping of various elements, and can accurately control and calculate the composition of the deposited film. Compared with the traditional alloy target, it can realize the control of doping concentration and prepare a highly uniform and consistent film.

Description

technical field [0001] The invention belongs to the field of magnetron sputtering technology, and in particular relates to a design method of a mosaic target. Background technique [0002] With the vigorous development of radio communication technology, filters tend to be integrated and high-frequency. AlN piezoelectric film materials have a sound velocity of longitudinal waves of about 10400m / s and a sound velocity of transverse waves of about 5500m / s, and can be fabricated with a center frequency of 5Ghz. At the same time, the AlN thin film has a series of excellent physical and chemical properties: high mechanical strength, high hardness, good chemical stability and thermal stability (can work normally at 1200 ° C), and good environmental tolerance; Moreover, AlN is compatible with the COMS process, and can achieve integration and miniaturization. AlN is environmentally friendly and does not have the problem of lead pollution when PZT is used as a piezoelectric film; AlN ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C23C14/06C23C14/35G01B5/20
CPCC23C14/0641C23C14/35C23C14/3407G01B5/20
Inventor杨成韬孙贤谢易微
OwnerUNIV OF ELECTRONICS SCI & TECH OF CHINA