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3D memory

A memory, three-dimensional technology, applied in electrical components and other directions, can solve problems such as inability to provide bit density, competition, etc.

Active Publication Date: 2020-12-25
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the two-layer stacked memory cell architecture cannot provide sufficient bit density to compete with mainstream DRAM (Dynamic Random Access Memory) and NAND-type memories

Method used

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Embodiment Construction

[0045] In order to make the technical solutions and advantages of the embodiments of the present invention clearer, the specific technical solutions of the invention will be described in further detail below with reference to the accompanying drawings in the embodiments of the present invention.

[0046] figure 1 A schematic diagram of a three-dimensional phase-change memory cell array observed by scanning electron microscopy. from figure 1 It can be seen that the three-dimensional phase change memory chip is composed of a plurality of small memory cell array blocks with single bit lines, word lines and memory cells. A three-dimensional phase change memory generally includes a top bit line, a word line, a bottom bit line, and memory cells located at the intersection of the bit line and the word line. In practical applications, the word line, the top bit line and the bottom bit line are usually formed by a 20nm / 20nm line width (L / S, line / space) formed after a patterning proce...

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Abstract

An embodiment of the present invention provides a three-dimensional memory, including: at least one memory cell array block; the memory cell array block includes: a first bit line layer, a second bit line layer, a third bit line layer arranged in sequence from top to bottom and parallel to each other The bit line layer and the fourth bit line layer; the bit lines of each bit line layer are parallel to each other, and the projections of the bit lines of each bit line layer on the first plane overlap; located between the first bit line layer and the second bit line layer The first word line layer; the second word line layer between the second bit line layer and the third bit line layer; the third word line layer between the third bit line layer and the fourth bit line layer; each The word lines of the word line layer are parallel to each other, and the projections of the word lines of each word line layer on the first plane are perpendicular to the projections of the bit lines of the first bit line layer on the first plane; Six memory cell layers between two bit line layers and word line layers.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a three-dimensional memory. Background technique [0002] Phase Change Memory (PCM, Phase Change Memory) is a storage technology that uses chalcogenides as storage media, and uses the resistance difference of materials in different states to save data. PCM has the advantages of bit-addressable, no data loss after power failure, high storage density, and fast read and write speed, and is considered to be the most promising next-generation memory. [0003] In the related art, the architecture of the mainstream three-dimensional phase change memory includes two-layer stacked memory cells. However, the two-layer stacked memory cell architecture cannot provide sufficient bit density to compete with mainstream Dynamic Random Access Memory (DRAM) and NAND-type memories. In order to improve the competitiveness of the 3D phase change memory, it is necessary to increa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/841H10N70/231H10N70/826
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD