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Large-area-array infrared detector and chip low-stress cold head structure thereof

An infrared detector and large area array technology, applied in the field of infrared detectors, can solve problems such as easy damage and thermal stress concentration, and achieve the effects of solving thermal stress concentration, ensuring low temperature reliability, and ensuring electrical signal extraction

Active Publication Date: 2020-11-27
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The embodiment of the present invention provides a large area array infrared detector and its chip low-stress cold head structure, which is used to solve the problem in the prior art that the large area array detector chip is concentrated in thermal stress at low temperature and is easily damaged by temperature shock

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Embodiment Construction

[0037] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0038] Such as Figure 1-Figure 2 As shown, the low-stress cold head structure 1 of a large area array infrared detector chip according to an embodiment of the present invention includes:

[0039] Dewar cold table 50;

[0040] The ceramic structural part 40 is bonded to the Dewar cold table 50;

[0041] At least one layer of ceramic frame, bonded to the side of the ceramic structural member 40 away from the Dewar cold table 50;

[0042] The ...

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Abstract

The invention discloses a large-area-array infrared detector and a chip low-stress cold head structure thereof. The large-area array infrared detector chip low-stress cold head structure comprises a Dewar cold table; a ceramic structural part, adhered to the Dewar cold table; at least one layer of ceramic frame, adhered to one side, far away from the Dewar cold table, of the ceramic structural part; and a detector hybrid chip, adhered to one side, far away from the ceramic structural member, of the at least one layer of ceramic frame. According to the invention, by optimizing the cold head structure, the low-temperature stress of the whole structure is released, the low-temperature reliability of the detector chip is ensured, the problems that the thermal stress of the large-area array detector chip is concentrated at low temperature and the large-area array detector chip is easily damaged by temperature impact can be solved, and meanwhile, the frame is selected as an electrical transition structure, so that electrical signal leading-out of the detector can be ensured.

Description

technical field [0001] The invention relates to the field of infrared detectors, in particular to a large area array infrared detector and its chip low-stress cold head structure. Background technique [0002] Cooled infrared detector components are widely used in infrared imaging systems and are the core components of various infrared test systems. With the rapid development of refrigerated infrared detectors, the scale of infrared detectors is also getting larger and larger, from the traditional 320×256 scale. At present, large area array detectors such as 1024×1024 and 2048×2048 have been engineered. International advanced detector manufacturers have also realized the production and application of 4096×4096 super large area array detectors. In the development process of large area array detectors, the expansion of the infrared focal plane detector area array scale, the detector chip is more likely to be damaged by the temperature shock, which directly affects the perform...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/024H01L31/09H01L31/101
CPCH01L31/024H01L31/09H01L31/101
Inventor 付志凯张磊吴卿王成刚
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP