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Large area array infrared detector and its chip low stress cold head structure

An infrared detector and a large area array technology, applied in the field of infrared detectors, can solve the problems of thermal stress concentration and easy damage, and achieve the effect of solving thermal stress concentration and ensuring low temperature reliability.

Active Publication Date: 2022-03-11
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The embodiment of the present invention provides a large area array infrared detector and its chip low-stress cold head structure, which is used to solve the problem in the prior art that the large area array detector chip is concentrated in thermal stress at low temperature and is easily damaged by temperature shock

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  • Large area array infrared detector and its chip low stress cold head structure
  • Large area array infrared detector and its chip low stress cold head structure

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Embodiment Construction

[0037] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0038] Such as Figure 1-Figure 2 As shown, the low-stress cold head structure 1 of a large area array infrared detector chip according to an embodiment of the present invention includes:

[0039] Dewar cold table 50;

[0040] The ceramic structural part 40 is bonded to the Dewar cold table 50;

[0041] At least one layer of ceramic frame, bonded to the side of the ceramic structural member 40 away from the Dewar cold table 50;

[0042] The ...

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Abstract

The invention discloses a large area array infrared detector and its chip low-stress cold head structure. Large area array infrared detector chip low-stress cold head structure, including: Dewar cold stage; ceramic structural parts, bonded to the Dewar cold stage; at least one layer of ceramic frame, bonded to the ceramic structural parts away from the Dewar cold stage One side: the detector is a hybrid chip, bonded to at least one side of the ceramic frame away from the ceramic structure. By adopting the present invention, by optimizing the structure of the cold head, the low-temperature stress of the entire structure is released, ensuring the low-temperature reliability of the detector chip, and can solve the problem that the large-area detector chip is concentrated in thermal stress at low temperature and is easily damaged by temperature shock , and at the same time choose the frame as the electrical transition structure, which can ensure the electrical signal of the detector is drawn out.

Description

technical field [0001] The invention relates to the field of infrared detectors, in particular to a large area array infrared detector and its chip low-stress cold head structure. Background technique [0002] Cooled infrared detector components are widely used in infrared imaging systems and are the core components of various infrared test systems. With the rapid development of refrigerated infrared detectors, the scale of infrared detectors is also getting larger and larger, from the traditional 320×256 scale. At present, large area array detectors such as 1024×1024 and 2048×2048 have been engineered. International advanced detector manufacturers have also realized the production and application of 4096×4096 super large area array detectors. In the development process of large area array detectors, the expansion of the infrared focal plane detector area array scale, the detector chip is more likely to be damaged by the temperature shock, which directly affects the perform...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/024H01L31/09H01L31/101
CPCH01L31/024H01L31/09H01L31/101
Inventor 付志凯张磊吴卿王成刚
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP