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Gas detection device and gas detection method using metal-oxide semiconductor gas sensor

A gas sensor and gas detection technology, which can be used in measurement devices, instruments, scientific instruments, etc., to solve problems such as difficulty in correctly detecting low-concentration gases

Active Publication Date: 2020-12-22
FIGARO ENG INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Since the resistance value of metal oxide semiconductor gas sensors fluctuates according to various factors, it is difficult to accurately detect low-concentration gases

Method used

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  • Gas detection device and gas detection method using metal-oxide semiconductor gas sensor
  • Gas detection device and gas detection method using metal-oxide semiconductor gas sensor
  • Gas detection device and gas detection method using metal-oxide semiconductor gas sensor

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Embodiment

[0039] exist Figure 1 to Figure 15 Examples are shown in . figure 1 Indicates the structure of the gas sensor 2, 4 is a film-like metal oxide semiconductor, such as SnO 2 Film, WO 3 Membrane, In 2 o 3 When these metal oxide semiconductors come into contact with a reducing gas, the resistance value decreases. Also, the resistance value decreases if the ambient temperature increases or the absolute humidity increases. In addition to this, the resistance value of the metal oxide semiconductor film 4 also changes depending on the trace amount of gas contained in the air.

[0040] In order to detect the resistance value of the metal oxide semiconductor 4, for example, a pair of electrodes 5 and 5 are connected, and a heater 8 is provided on the substrate 6 to heat the metal oxide semiconductor 4 to an operating temperature. The material and structure of the gas sensor 2 are arbitrary. For example, the substrate 6 can also be made of SiO2 placed on the hole of the Si chip. ...

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Abstract

In the present invention, gas is detected through the processing, using a digital information processing device, of the output of a metal-oxide semiconductor gas sensor that has a resistance value that decreases when the metal-oxide semiconductor gas sensor is in a reducing gas and the comparison of the output with a comparison value for gas detection. The digital information processing device extracts data expressing the resistance value of the gas sensor in air from the output of the gas sensor. The digital information processing device generates a comparison value such that the larger the resistance value of the gas sensor in air, the greater the ratio between the resistance values in air and the gas.

Description

technical field [0001] The present invention relates to gas detection by metal oxide semiconductor gas sensors. Background technique [0002] Since the resistance value of metal-oxide-semiconductor gas sensors varies depending on various factors, it is difficult to accurately detect low-concentration gases. Regarding this point, in Patent Document 1 (JP2741381B), when the resistance value of the metal oxide semiconductor gas sensor is substantially constant, the resistance value of the gas sensor is stored as a reference value. And, gas is detected based on a change from the stored resistance value. Patent Document 2 (JP2911928B) discloses that if SnO 2 When the film is rapidly cooled from a temperature above 450°C to room temperature, the resistance value in air increases sharply, and the resistance value in gas does not increase. Therefore, it is possible to detect gas with high sensitivity at room temperature. [0003] prior art literature [0004] patent documents ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12G01N27/04
CPCG01N27/12G01N33/0027G01N33/0067G01N33/0031G01N33/0009G01N33/0011G01N1/24G01N33/0016
Inventor 井泽邦之
Owner FIGARO ENG INC