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Substrate processing apparatus

A substrate processing and equipment technology, applied in coating, gaseous chemical plating, discharge tube, etc., can solve the problems of reduced efficiency of plasma processing

Pending Publication Date: 2021-02-02
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, parasitic plasma generated in an area other than the reaction space such as an exhaust line may lead to a reduction in the efficiency of plasma treatment in the reaction space

Method used

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Embodiment Construction

[0038] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one", when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

[0039] Hereinafter, embodiments of the present disclosure are described in detail with reference to the accompanying drawings.

[0040] Terms used in this specification are used to explain specific embodiments, not to limit the present...

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Abstract

A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reactionspace, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 880,622, filed July 30, 2019, in the U.S. Patent and Trademark Office, the entire disclosure of which is hereby incorporated by reference. technical field [0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure. Background technique [0004] In semiconductor deposition processing, plasma processing can be performed at a low temperature compared with thermal processing, and thus thermal shock to semiconductor devices can be reduced. In addition, as the thermal shock applied to semiconductor deposition equipment is reduced, the durability of the equipment and the life of constituent parts can be improved, so plasma treatment is applied to many processes. [0005] In a deposition process using plasma, plasma is generated by a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01J37/32C23C16/54
CPCH01L21/67017H01L21/67207H01J37/32431H01J37/3244C23C16/54H01J37/32513H01J37/32449H01J37/32834H01J37/32715C23C16/4412C23C16/4585C23C16/50H01L21/67092H01J2237/332
Inventor 郑元基李主日张夏硕
Owner エーエスエムアイピーホールディングベーフェー