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Substrate processing apparatus and method

A technology for processing devices and substrates, which can be applied to metal material coating processes, photoengraving processes of pattern surfaces, instruments, etc., and can solve the problem that thin layers are not very resistant to etching.

Pending Publication Date: 2021-02-02
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such thin layers may not be very etch resistant

Method used

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  • Substrate processing apparatus and method
  • Substrate processing apparatus and method
  • Substrate processing apparatus and method

Examples

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Embodiment Construction

[0020] While certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention as well as obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the present disclosure should not be limited by the specific disclosed embodiments described below. Furthermore, the illustrations presented herein are not meant to be actual views of any particular material, structure or device, but are merely idealized representations used to describe embodiments of the present disclosure.

[0021] As used herein, the term "substrate" may refer to any one or more underlying materials that may be used or on which devices, circuits, or films may be formed. Additionally, the term "modifiable layer" may refer to any material into which additional species such as atoms, molecules or ions may be introduced. The term "semiconductor device st...

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Abstract

A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial maskinglayer.

Description

technical field [0001] The present disclosure generally relates to a substrate processing apparatus and method of creating a sacrificial masking layer. [0002] A substrate processing apparatus for producing a sacrificial masking layer on a substrate may include a lithographic input / output port to transfer a substrate between the substrate processing apparatus and the lithographic projection apparatus. [0003] Substrate processing methods to create the sacrificial masking layer may include: [0004] providing the substrate with the radiation modifiable layer to a lithographic projection apparatus for patterning, and [0005] The radiation modifiable layer of the substrate is patterned with the exposure radiation of the lithographic projection apparatus modifying the radiation modifiable layer exposed to the radiation. Background technique [0006] Different process steps can be performed on the substrate using substrate processing equipment such as a track or coater befor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/308C23C16/04
CPCC23C16/042H01L21/3081H01L21/3085H01L21/3086H01L21/67207H01L21/67225H01L21/67276G03F7/265H01L21/02181H01L21/02186H01L21/0228H01L21/0332H01L21/3105H01L21/31122H01L21/32C23C16/45525H01L21/0337H01L21/6715H01L21/67742G03F7/162
Inventor I.拉伊杰马克斯D.皮尤米I.祖尔科夫D.德罗斯特M.吉范斯
Owner エーエスエムアイピーホールディングベーフェー
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