Broadband Doherty power amplifier based on single parallel resonance block

A power amplifier and resonant block technology, which is applied in the direction of improving amplifiers to improve efficiency, etc., can solve the problems of occupation, multi-chip layout area, large loss, etc., and achieve small area, which is conducive to miniaturization design, and reduces insertion loss and size. Effect

Active Publication Date: 2021-03-12
NANJING MILEWEI CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But these two methods have the same limitation, that is, each transistor requires a resonant network to control harmonics, which will undoubtedly introduce greater losses and occupy more chip layout area

Method used

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  • Broadband Doherty power amplifier based on single parallel resonance block
  • Broadband Doherty power amplifier based on single parallel resonance block
  • Broadband Doherty power amplifier based on single parallel resonance block

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Embodiment Construction

[0049] The present invention will be described in further detail below in conjunction with the examples and accompanying drawings, and the following examples do not limit the present invention.

[0050] A kind of broadband Doherty power amplifier based on single parallel resonant block provided by this embodiment, such as figure 1 shown, which includes:

[0051] A broadband input power splitter, the input end of the broadband input power splitter is connected to the radio frequency signal input end;

[0052] Carrier amplifying circuit, the input end of carrier amplifying circuit is connected with the first output end of described broadband input power divider; Described carrier amplifying circuit is mainly composed of phase-shifting network, the first input matching network, carrier amplifier T1, the first output matching The network is cascaded sequentially;

[0053] A peak amplifying circuit, the input end of the peak amplifying circuit is connected with the second output ...

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PUM

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Abstract

The invention discloses a broadband Doherty power amplifier based on a single parallel resonance block. The broadband Doherty power amplifier comprises a broadband input power divider; a carrier amplification circuit, which is mainly formed by sequentially cascading a phase shift network, a first input matching network, a carrier amplifier T1 and a first output matching network; a peak value amplifying circuit, which is mainly formed by sequentially cascading a second input matching network, a peak value amplifier T2 and a second output matching network; and a combined resonance circuit, whichcomprises a parallel resonance block and is mainly formed by connecting a transmission line inductor L1 and a lumped capacitor C1 in parallel, wherein the constraint condition M selected for the inductance value of the transmission line inductor L1 is that when the two ends of the parallel resonance block are connected with terminating loads with the impedance of Ropt, the S11 amplitude of the parallel resonance block is not larger than -15 dB, and the absolute value of the S21 phase is not larger than 10 degrees. The broadband Doherty power amplifier is low in insertion loss, compact in structure, smaller in overall size, beneficial to miniaturization design and capable of saving cost.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a power amplifier. Background technique [0002] With the development of wireless communication technology, the peak-to-average ratio of the modulated signal becomes higher and higher. It is very necessary to improve the efficiency of the power amplifier at a larger backoff output power. At the same time, the large-scale application of MIMO technology in 5G reduces the demand for single power amplifier output power and increases the demand for miniaturized power amplifier size. GaN-based high electron mobility monolithic integrated Doherty power amplifier is one of the best choices to meet the above requirements, and thus has attracted widespread attention. [0003] In order to further improve the efficiency of the amplifier, it is usually necessary to control the harmonics of the transistor. A common approach is to use a resonant network between the carrier or pea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/07
CPCH03F1/07
Inventor 刘睿佳夏冬
Owner NANJING MILEWEI CORP
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