A protective semiconductor device

A technology of semiconductors and devices, applied in the field of protective semiconductor devices, can solve problems such as device failure, failure to advance or delay control work, and unsuitability
CN112614836BActive Publication Date: 2021-07-30NANJING SINNOPOWER TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING SINNOPOWER TECH CO LTD
Publication Date
2021-07-30

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a protective semiconductor device, which relates to a semiconductor device and solves the technical problems that the response speed, robustness and reliability of the protective semiconductor device are not fast enough under high voltage or high power, and the main points of the technical scheme It includes an N-type substrate region, a P-type anode region is arranged at the bottom of the N-type substrate region, a P-type base region is arranged on the top of the N-type substrate region, and a horizontally variable doping region is arranged in the P-type base region. Complex N-VLD region. Multiple electron-hole-electron-hole cycles can be formed between the N-VLD region and the P-type anode region, thereby forming a strong current between the anode and the cathode, and the dynamic current sharing effect of the N-VLD region Keep the working status of each cell highly consistent. Therefore, when there is a surge current in the external circuit, a very large current channel can be formed between the anode and the cathode by actively controlling the trigger electrode, which improves the ability of the device to pass the surge current and realizes the active protection of the circuit system.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present disclosure relates to semiconductor devices, and in particular to a protective semiconductor device for high voltage and / or high power. Background technique

[0002] Semiconductor protection devices are widely used in consumer electronics, white goods, industrial control, power electronics, and defense electronics. As an electronic component that releases excess voltage or current instantaneously, under normal conditions, the protective device is only an auxiliary component of the main circuit and does not participate in or affect the normal circuit function of the main circuit; only when the voltage across the protective device or flows through the protective device When the current of the device exceeds a certain threshold, the protection device enters the working state of breakdown clamp or latch, allowing the excess energy in the circuit to discharge from the bypass protection device, thereby achieving the purpose of protecting the main...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More