Protective semiconductor device

A semiconductor and device technology, applied in the field of protective semiconductor devices, can solve problems such as reducing the safe working area of ​​the device, affecting the dynamic performance of the device, and device failure.

A semiconductor and device technology, applied in the field of protective semiconductor devices, can solve problems such as reducing the safe working area of ​​the device, affecting the dynamic performance of the device, and device failure.

CN112614836AActive Publication Date: 2021-04-06NANJING SINNOPOWER TECH CO LTD
4 Cites 2 Cited by

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Protective semiconductor device
  • Protective semiconductor device
  • Protective semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The technical solution of the present disclosure will be described in detail below in conjunction with the accompanying drawings. In the description of the present application, it should be understood that the terms "first", "second", "third" and "fourth" are used for descriptive purposes only, and should not be understood as indicating or implying relative importance or implicitly The number of technical features indicated is used only to distinguish the different components. In the description of this application, the first conductivity type includes N-type and P-type, and the second conductivity type also includes N-type and P-type. When the first conductivity type is N-type, the second conductivity type is P-type; When the first conductivity type is P-type, the second conductivity type is N-type.

[0035] Additionally, the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "sidewall", "vertical", "horizontal", etc. indicate The orientation ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a protective semiconductor device, belonging to semiconductor devices. The invention aims to solve the technical problems of low response speed and low robustness and reliability of conventional protective semiconductor devices under high voltage or high power. According to a technical scheme in the invention, the protective semiconductor device comprises an N-type substrate region, wherein a P-type anode region is arranged at the bottom of the N-type substrate region; the top of the N-type substrate region is provided with a P-type base region; and the P-type base region is internally provided with an NVLD region which is variably doped along a horizontal direction. According to the invention, multiple times of electron-hole-electron-hole circulation reciprocation can be formed between the NVLD region and the P-type anode region, so strong current is formed between an anode and a cathode, and the working state of each cell is kept highly consistent due to the dynamic current sharing effect of the NVLD region. Therefore, when surge current occurs in an external circuit, a channel with large current can be formed between the anode and the cathode by actively controlling a trigger electrode, the surge current passing capability of the device is improved, and active protection of a circuit system is realized.

Description

technical field [0001] The present disclosure relates to semiconductor devices, and in particular to a protective semiconductor device for high voltage and / or high power. Background technique [0002] Semiconductor protection devices are widely used in consumer electronics, white goods, industrial control, power electronics, and defense electronics. As an electronic component that releases excess voltage or current instantaneously, under normal conditions, the protective device is only an auxiliary component of the main circuit and does not participate in or affect the normal circuit function of the main circuit; only when the voltage across the protective device or flows through the protective device When the current of the device exceeds a certain threshold, the protection device enters the working state of breakdown clamp or latch, allowing the excess energy in the circuit to discharge from the bypass protection device, thereby achieving the purpose of protecting the main...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
06 Apr 2021
Publication
CN112614836A
IPC
H01L27/088
CPC
H01L27/088
Inventors
吕信江; 朱旭强