Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional integrated structure and manufacturing method thereof

A technology of three-dimensional integration and manufacturing method, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc. Effect

Pending Publication Date: 2021-06-04
FUDAN UNIV +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It does not make the structure of the capacitor compact while ensuring the integrity of the capacitor, and at the same time cannot achieve a nanocapacitor with a lower resistivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional integrated structure and manufacturing method thereof
  • Three-dimensional integrated structure and manufacturing method thereof
  • Three-dimensional integrated structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other el...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a three-dimensional integrated structure which comprises a silicon substrate, a first nano capacitor and a second nano capacitor, the first nano capacitor and the second nano capacitor respectively adopt a first insulating substrate and a second insulating substrate, and due to the insulation property of the first insulating substrate and the second insulating substrate, the first bottom metal electrode layer can be directly arranged on the first insulating substrate, the second bottom metal electrode layer can be directly arranged on the second insulating substrate, the manufacturing process is reduced, the second insulating substrate is provided with a plurality of first containing grooves at intervals, and the bottom ends of the first containing grooves are provided with openings for exposing the first top metal electrode layer. The second bottom metal electrode layer is electrically connected with the first top metal electrode layer through the opening, so that the second bottom metal electrode layer is connected with the first top metal electrode layer while the second bottom metal electrode layer is arranged in the first accommodating groove, and the time for preparing the integrated structure is shortened. In addition, the invention also provides a manufacturing method of the three-dimensional integrated structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional integrated structure and a manufacturing method thereof. Background technique [0002] At present, for portable electronic devices, batteries are still the main energy supply components. Although battery technology is constantly developing, a compromise still needs to be made between the capacity, volume and weight of the battery. Accordingly, some alternative power supply components with large capacity, light weight, and small size have been researched and developed, such as micro fuel cells, plastic solar cells, and energy harvesting systems. [0003] In all cases mentioned above, an energy buffer system is usually required to maintain a continuous and steady energy output. For example, fuel cell systems are generally believed to have slower start-up times and lower kinetic energy. Therefore, a hybrid system in which the fuel cell provides the basic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/08H01L21/822
CPCH01L27/0805H01L21/8221
Inventor 陈琳朱宝孙清清张卫
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products